Abstract:Half-wave phase shifts were fabricated in the center of second-order GaAs gratings, for use in surface-emitting, horizontal-cavity, semiconductor diode lasers (λ=0.98 μm). Incorporating such gratings in diode lasers with distributed-feedback (DFB) active regions and distributed Bragg reflectors (DBRs) is found to provide surface-normal, single-lobe beam emission, as predicted by theory. InGaAs/AlGaAs/InGaP, two-quantum-well structures are employed. A 500-μm-long GaAs/Au second-order grating with half-wave phase shift represents the DFB region, which provides feedback and unidirectional light outcoupling. GaAs/SiO2/Au, 500-μm-long, second-order gratings are the DBR regions, on either side of the DFB region, which provide both frequency-selective feedback as well as unidirectional outcoupling. Lateral-mode control is achieved via a 2.5-μm-wide ridge waveguide. Surface emission is obtained through a 80-μm-wide window stripe in the metallization on the substrate n-side. Single-frequency lasing in an orthonormally emitted, single-lobe, diffraction-limited beam is obtained to 3× threshold under pulsed-drive conditions (200 ns wide pulses, 1 kHz repetition rate).

Experimental demonstration of eight-wavelength distributed feedback semiconductor laser array using equivalent phase shift.

Heterogeneously Integrated Iii-V/Silicon Dual-Mode Distributed Feedback Laser Array for Terahertz Generation

Experimental Demonstration of the Three Phase Shifted Dfb Semiconductor Laser Based on Reconstruction-Equivalent-Chirp Technique

Single-lobe, Surface-Normal Beam Surface Emission from Second-Order Distributed Feedback Lasers with Half-Wave Grating Phase Shift

Single Output Tunable Dfb Semiconductor Laser Array with Equivalent Phase Shift

Experimental Demonstration of Distributed Feedback Semiconductor Lasers Based on Reconstruction-Equivalent-Chirp Technology

Four Distributed Feedback Laser Array Integrated with Multimode-Interference and Semiconductor Optical Amplifier

Double Half-Wave-Coupled Rectangular Ring-Fp Laser With 35x100ghz Wavelength Tuning

Experimental Demonstration of Wavelength Channel Switching in V-coupled Cavity Semiconductor Laser

Wavelength Switchable Semiconductor Laser Based on Half-Wave Coupled Fabry–Pérot and Rectangular Ring Resonators

Study of Cascaded Tunable DFB Semiconductor Laser with Wide Tuning Range and High Single Mode Yield Based on Equivalent Phase Shift Technique

Experimental demonstration of the three-phase-shifted DFB semiconductor laser with buried heterostructure using common holographic exposure

Second-Order Distributed Feedback Quantum Cascade Lasers at 7.8μm

Experimental Demonstration of a Fast Tunable Laser Based on DFB Semiconductor Laser Array Using Reconstruction-Equivalent-chirp (REC) Technique

Wide-band Fast-sweeping Tunable Laser Based on Mutliwavelength DFB Semiconductor Laser Array

Demonstration of a Low-Cost Cascade Tunable Semiconductor DFB Laser

Experimental demonstration of amplified feedback DFB laser based on the reconstruction equivalent chirp technique

Wavelength switchable semiconductor laser using half-wave V-coupled cavities.

Double Half-Wave-Coupled Rectangular Ring-FP Laser With $35\times 100$ GHz Wavelength Tuning

Wideband Tunable REC-DFB Laser Array Using Thin-Film Heaters on the Submount

Focused Ion Beam Lithography of Multiperiod Gratings for A Wavelength-Division-Multiplexed Transmitter Laser Array