Abstract:Abstract Charge transport (CT) in dynamically disordered molecular systems is still unclear; though it is fundamentally important to understand the semiconducting properties of molecular devices. In this regard, we explore vibronically coupled polaron hopping transport in the extended hopping systems (N + 1 sites) of thiazolothiazole (TZTZ) based molecules. The molecular vibrations correlated charge transfer integral and site energy fluctuation effects on polaron transport are analyzed by kinetic Monte-Carlo simulations. In order to quantify the CT properties more precisely, we have proposed the continuum time delayed CT mechanism, which takes account of typical disordered (static or dynamic) effect via dispersion on each CT quantity (like charge transfer rate, diffusion coefficient, mobility, current density and etc) at each hopping. The charge compressibility analysis further addresses the electronic level understanding of all CT quantities, which originally relates the thermodynamic density of states with CT. Using differential entropy-dependent charge density and diffusion expressions, the drift-diffusion transport has been elucidated for different extended systems of TZTZ derivatives. Besides, we have mainly developed entropy-ruled diffusion-mobility relation for both degenerate and nondegenerate materials to study the validity and limitations of original Einstein relation, which directly pertain to the device performance. Here, the traversing chemical potential along the hopping sites is the deterministic parameter of diffusion-mobility ratio. Using our continuum time delayed model, we can categorize the typical disordered transport in the molecular semiconductors; whether is dynamic or static or intermediate disordered transport.

Monte Carlo Simulation Based on Dynamic Disorder Model in Organic Semiconductors: from Coherent to Incoherent Transport.

Quantum coherence and carriers mobility in organic semiconductors

Charge Transport in Organic Semiconductors: from Incoherent to Coherent

Multiscale Study of Charge Mobility of Organic Semiconductor with Dynamic Disorders

Dynamic Effects on Hole Transport in Amorphous Organic Semiconductors: a Combined QM/MM and kMC Study.

Electronic transport and quantum localization effects in organic semiconductors

Interplay between electron-phonon couplings and disorder strength on the transport properties of organic semiconductors

Analyzing Dynamical Disorder for Charge Transport in Organic Semiconductors via Machine Learning

From charge transport parameters to charge mobility in organic semiconductors through multiscale simulation.

Carrier Density Dependence Of Mobility In Organic Solids: A Monte Carlo Simulation

Simulation of Charge Transport in Organic Semiconductors: A Time-Dependent Multiscale Method Based on Non-Equilibrium Green's Functions

Decoherence And Energy Relaxation In The Quantum-Classical Dynamics For Charge Transport In Organic Semiconducting Crystals: An Instantaneous Decoherence Correction Approach

Continuum time-delayed electron hopping in the extended dynamical molecules and entropy-ruled Einstein relation for organic semiconductors

Relationship Between Mobilities from Time-Of-Flight and Dark-Injection Space-Charge-Limited Current Measurements for Organic Semiconductors: A Monte Carlo Study

Analysis of external and internal disorder to understand band-like transport in n-type organic semiconductors

Freeing electrons from extrinsic and intrinsic disorder yields band-like transport in n-type organic semiconductors

Charge transport in mixed organic disorder semiconductors: Trapping, scattering, and effective energetic disorder

Crossover from Hopping to Band-Like Transport in Crystalline Organic Semiconductors: the Effect of Shallow Traps.

Monte Carlo Simulation of Carrier Diffusion in Organic Thin Films with Morphological Inhomogeneity

Influences of Dynamic and Static Disorder on the Carrier Mobility of BTBT-C12 Derivatives: a Multiscale Computational Study.

Diagrammatic quantum Monte Carlo toward the calculation of transport properties in disordered semiconductors