Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Carrier Density Dependence Of Mobility In Organic Solids: A Monte Carlo Simulation

Propagation of Collective Pair Excitations in Disordered Bose Superfluids

Monte Carlo Simulation Based on Dynamic Disorder Model in Organic Semiconductors: from Coherent to Incoherent Transport.

Hopping charge transport in disordered organic materials: where is the disorder?

A Competitive Hopping Model for Carrier Transport in Disordered Organic Semiconductors.

Monte Carlo Simulation of Carrier Diffusion in Organic Thin Films with Morphological Inhomogeneity

Finite-Size Scaling of Charge Carrier Mobility in Disordered Organic Semiconductors

Hopping charge transport in organic materials

Multiscale Study of Charge Mobility of Organic Semiconductor with Dynamic Disorders

Disorder and Frustration in Diluted Magnetic Semiconductors at Low Carrier Densities

Influences of Dynamic and Static Disorder on the Carrier Mobility of BTBT-C12 Derivatives: a Multiscale Computational Study.

On Analytical Modeling of Hopping Transport of Charge Carriers and Excitations in Materials with Correlated Disorder

Charge Transport In Amorphous Organic Semiconductors: Effects Of Disorder, Carrier Density, Traps, And Scatters

Distribution of charge carrier transport properties in organic semiconductors with Gaussian disorder

Carrier hopping in disordered semiconducting polymers: How accurate is the Miller-Abrahams model?

Chemical potential in disordered organic materials

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

From charge transport parameters to charge mobility in organic semiconductors through multiscale simulation.

The Effect of Electric Field on Carrier Mobility in Organic Semiconductors Based on Exponential Type Density of States and Genuine Transport Energy

Hopping charge transport in amorphous organic and inorganic materials with spatially correlated random energy landscape

Quantum coherence and carriers mobility in organic semiconductors