Synthesis, Structural and Magnetic Properties of Cobalt-Doped GaN Nanowires on Si by Atmospheric Pressure Chemical Vapor Deposition
Zhe Chuan Feng,Yu-Lun Liu,Jeffrey Yiin,Li-Chyong Chen,Kuei-Hsien Chen,Benjamin Klein,Ian T. Ferguson
DOI: https://doi.org/10.3390/ma16010097
IF: 3.4
2022-12-23
Materials
Abstract:GaN nanowires (NWs) grown on silicon via atmospheric pressure chemical vapor deposition were doped with Cobalt (Co) by ion implantation, with a high dose concentration of 4 × 1016 cm−2, corresponding to an average atomic percentage of ~3.85%, and annealed after the implantation. Co-doped GaN showed optimum structural properties when annealed at 700 °C for 6 min in NH3 ambience. From scanning electron microscopy, X-ray diffraction, high resolution transmission electron microscope, and energy dispersive X-ray spectroscopy measurements and analyses, the single crystalline nature of Co-GaN NWs was identified. Slight expansion in the lattice constant of Co-GaN NWs due to the implantation-induced stress effect was observed, which was recovered by thermal annealing. Co-GaN NWs exhibited ferromagnetism as per the superconducting quantum interference device (SQUID) measurement. Hysteretic curves with Hc (coercivity) of 502.5 Oe at 5 K and 201.3 Oe at 300 K were obtained. Applied with a magnetic field of 100 Oe, the transition point between paramagnetic property and ferromagnetic property was determined at 332 K. Interesting structural and conducive magnetic properties show the potential of Co-doped GaN nanowires for the next optoelectronic, electronic, spintronic, sensing, optical, and related applications.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering