Abstract:Ultrathin AlOxNy films have been deposited by metalorganic chemical vapor deposition (MOCVD) using dimethylaluminumhydride (DMAH) and O-2 as a precursor and an oxidant, respectively, at a growth temperature of 300 degrees C on Si wafers. The N component came from propylamine which was added into DMAH to reduce its viscosity. The interfacial thermal stability of the AlOxNy/Si gate stacks has been investigated during the high temperature under ultrahigh-vacuum condition, as well as under oxygen ambient condition. O-2 ambient annealing of the AlOxNy/Si gate stack leads to the abrupt growth of the SiO2 layer due to the oxidation of the Si by oxygen diffusion. Ultrahigh vacuum annealing of the AlOxNy/Si system drastically decreases the thermal reaction and suppresses the growth of the SiO2 layer compared to that of O-2-annealing samples, which can be due to shortage of the oxidant source. Angular dependent X-ray photoelectron spectra of Si 2p for the O-2 and vacuum-annealing samples have indicated that not all SiO2 can be at the surface but some must reside at the interface as well. Stress-induced emission of Si atoms from the interface is identified as the source of the surface SiO2 layer. Based on the experimental analysis, the clear mechanisms of the interface growth related with different ambient has been obtained, which will pay the way for the deposition of high-k with high-quality on Si substrates for applications in future microelectronic devices.

Annealing-Ambient-Dependent Thermal Stability Of Ultrathin Aloxny Films Grown By Metalorganic Chemical Vapor Deposition

Nitridation of Metalorganic-Chemical-VaporDeposited Al 2 O 3 Gate Dielectrics by NH 3 Annealing

Metal-organic Chemical Vapor Deposition of Aluminium Oxynitride from Propylamine–dimethylaluminium Hydride and Oxygen: Growth Mode Dependence and Performance Optimization

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Growth and Characterization of Al2o3 Gate Dielectric Films by Low-Pressure Metalorganic Chemical Vapor Deposition

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Atomic Layer Deposition and Post-Growth Thermal Annealing of Ultrathin MoO3 Layers on Silicon Substrates: Formation of Surface Nanostructures

Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Influence of NH3 Annealing on the Chemical States of HfO2/Al2O3 Stacks Studied by X-ray Photoelectron Spectroscopy

Annealing Effects on the Optical and Structural Properties of Al2O3/SiO2 Films As UV Antireflection Coatings on 4H-Sic Substrates

Thermal Stability of ALD Lanthanum Aluminate Thin Films on Si (100)

Annealing-induced Evolution in Interface Stability and Electrical Performance of Sputtering-Driven Rare-Earth-based Gate Oxides

Influence of Annealing Atmosphere on ZnO Thin Films Grown by MOCVD

Effect of Annealing Atmosphere on the Structural and Optical Properties of ZnO Thin Films on Si (100) Substrates Grown by Atomic Layer Deposition

Thermal Annealing Effects on the Structure and Electrical Properties of Al2O3 Gate Dielectrics on Fully Depleted SiGe on Insulator

Influences of Annealing Temperature on the Optical Properties of SiOx Thin Film Prepared by Reactive Magnetron Sputtering

Importance of Controlling Oxygen Incorporation into HfO2∕Si∕n-GaAs Gate Stacks

Influence of annealing environment on the ALD-Al2O3/4H-SiC interface studied through XPS