Atomic nitrogen chemisorption on graphene with extended line defects

Yu Li,JiChang Ren,Ruiqin Zhang,Zijing Lin,Michel A. Van Hove
DOI: https://doi.org/10.1039/c2jm35345h
2012-01-01
Journal of Materials Chemistry
Abstract:The adsorption of N atoms onto a graphene substrate with extended line defects (ELDs) has been investigated by first-principles calculations. In the presence of recently observed extended line defects, the N adatom can be adsorbed onto both top and bridge sites of the graphene lattice. We demonstrate that chemisorption on ELDs in graphene can substantially affect their structural and electronic properties, depending in particular on specific adsorption sites and density. We also find that magnetism can be induced in ELD-graphene by nitrogenation at suitable N densities; a higher density of N adsorption onto the core carbon atoms of the ELD removes this.
What problem does this paper attempt to address?