Abstract:Hexagonal boron nitride ($\it h$-BN) exhibits dominant $\pi$-bands near the Fermi level, similar to graphene. However, unlike graphene, where tight-binding (TB) models accurately reproduce band edges near the $K$ and $K^{\prime}$ points in the Brillouin zone, a wider bandgap in $\it h$-BN necessitates capturing the band edges at both the $K$ and $M$ points for precise bandgap calculations. We present effective TB models derived from $\it ab initio$ calculations using maximally localized Wannier functions (MLWFs) centered on boron and nitrogen sites. These models consider hopping terms of up to four distant neighbors and achieve excellent agreement with $\it ab initio$ results near the $K$ and $M$ points. Furthermore, we compare the band structures from our simplified models with those obtained from $\it ab initio$ calculations and the full tight-binding model to assess their accuracy. To account for the effects of strains, we introduce fitting parametrizations that relate the hopping parameters of the effective TB model to the lattice constant and interlayer distance. Additionally, we utilize the two-center approximation to calculate the interlayer hopping energies based on the relative distances between sublattices to generalize the interlayer hopping parameters across different stacking configurations. We demonstrate the effectiveness of this method by comparing the electronic structure of zero-twist and twisted $\it h$-BN systems with $\it ab initio$ calculations.

Crystal Structures and Band Gap Characters of H-Bn Polytypes Predicted by the Dispersion Corrected DFT and GW Method

New Hexagonal Boron Nitride Polytypes with Triple-Layer Periodicity

Cubic, wurtzite, and 4H-BN band structures calculated using GW methods and maximally localized Wannier functions interpolation

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Gw Calculations of the Band Gaps of Bc2n Polytypes

Band Gaps and Dielectric Functions of Cubic and Hexagonal Diamond Polytypes Calculated by Many-Body Perturbation Theory

Hyperhoneycomb Boron Nitride With Anisotropic Mechanical, Electronic, And Optical Properties

Influence of high-energy local orbitals and electron-phonon interactions on the band gaps and optical absorption spectra of hexagonal boron nitride

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

The influence of high-energy local orbitals and electron-phonon interactions on the band gaps and optical spectra of hexagonal boron nitride

Strain-tunable band gap in graphene/h-BN hetero-bilayer

Structural Determination of a Graphite/Hexagonal Boron Nitride Superlattice Observed in the Experiment.

An accurate description of the structural and electronic properties of twisted bilayer graphene-boron nitride heterostructures

Carbon-Based Band Gap Engineering in the h-BN Analytical Modeling

Band gap measurements of monolayer h-BN and insights into carbon-related point defects

Ab initio tight-binding Models for Mono- and Bilayer Hexagonal Boron Nitride (h-BN)

Direct observation of the band structure in bulk hexagonal boron nitride

Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride

Electronic, optical, and adsorption properties of Li doped hexagonal boron nitride: A GW approach

Bandgap and exciton binding energies of hexagonal boron nitride probed by photocurrent excitation spectroscopy

Tuning the electronic properties and band offset of h-BN/diamond mixed-dimensional heterostructure by biaxial strain