Structure and Electrical Properties of the Ho2O3 Doped 0.82bi0.5na0.5tio3–0.18bi0.5k0.5tio3 Lead-Free Piezoelectric Ceramics

Peng Fu,Zhijun Xu,Ruiqing Chu,Xueyan Wu,Wei Li,Huimin Zhang

DOI: https://doi.org/10.1007/s10854-012-0734-5

IF: 2.856

2011-01-01

Current Applied Physics

Abstract:Ho2O3 (0–0.7 wt%)-doped 0.82Bi0.5Na0.5TiO3–0.18Bi0.5K0.5TiO3 (BNKT18) lead-free piezoelectric ceramics were synthesized by a conventional solid-state reaction method. The effects of Ho2O3 on the microstructure and electrical properties were investigated. X-ray diffraction data shows that Ho2O3 in an amount of 0.1–0.7 wt% can diffuse into the lattice of the BNKT18 ceramics and form the pure perovskite phase. Scanning electron microscope (SEM) images indicate that the grain sizes of BNKT18 ceramics decrease with the increase of Ho2O3 content; in addition, the modified ceramics have the clear grain boundary and a uniformly distributed grain size. At room temperature, the electrical properties of the BNKT18 ceramics have been improved with the addition of Ho2O3, and the BNKT18 ceramics doped with 0.3wt.% Ho2O3 have the highest piezoelectric constant (d 33 = 137 pC/N), the highest remnant polarization (P r = 26.9 μC/cm2), the higher relative dielectric constant (ε r = 980) and lower dissipation factor (tanδ = 0.046) at a frequency of 10 kHz. The BNKT18 ceramics doped with 0.1 wt% Ho2O3 have the highest planar coupling factor (k p = 0.2426).