Sintering and Electrical Properties of Nb 5+ Doped 0.63bi(mg 1/2 Ti 1/2 )O 3 –0.37pbtio 3 Piezoelectric Ceramics

Xun Ji,Ruzhong Zuo,Wenwu Zuo,Xiaohui Wang,Longtu Li

DOI: https://doi.org/10.1007/s10854-012-0733-6

2012-01-01

Journal of Materials Science Materials in Electronics

Abstract:Nb5+ doped 0.63Bi(Mg1/2Ti1/2)O3–0.37PbTiO3 (0.63BMT–0.37PT + xNb5+) ceramics have been fabricated by means of citrate sol–gel method and ordinary sintering. Effects of Nb5+ doping on the densification and various electrical properties were studied. The results indicated that the addition of a small amount of Nb5+ gradually changes the crystal structure from a typical rhombohedral-tetragonal coexisted structure to a nearly pure rhombohedral structure. A slight amount of secondary phases start to appear as the doping content of Nb5+ is more than 1.5 mol%, indicating that the solubility limit of Nb5+ in the matrix composition is reached. Moreover, electrical properties of the sintered ceramics were obviously changed based on the effect of densification and ionic substitution. 0.63BMT–0.37PT + 0.005Nb5+ ceramics sintered at 1,020 °C exhibit optimum properties of piezoelectric constant d33 ~ 245 pC/N, planar electromechanical coupling factor kp ~ 30 %, \( \varepsilon_{33}^{\text{T}} /\varepsilon_{\text{o}} \) ~ 1,220, and Tc ~ 460 °C.