Abstract:Ge‐based devices are promising next‐generation technologies for extending Moore's law. However, Fermi‐level pinning (FLP) at the metal/n‐Ge interface results in large contact resistance. Here, a wafer‐scale conductive carbon nanotube insertion method is developed to alleviate FLP, leading to ohmic contact and the smallest contact resistance between a metal and a lightly doped n‐Ge. Germanium (Ge)‐based devices are recognized as one of the most promising next‐generation technologies for extending Moore's law. However, one of the critical issues is Fermi‐level pinning (FLP) at the metal/n‐Ge interface, and the resulting large contact resistance seriously degrades their performance. The insertion of a thin layer is one main technique for FLP modulation; however, the contact resistance is still limited by the remaining barrier height and the resistance induced by the insertion layer. In addition, the proposed depinning mechanisms are also controversial. Here, the authors report a wafer‐scale carbon nanotube (CNT) insertion method to alleviate FLP. The inserted conductive film reduces the effective Schottky barrier height without inducing a large resistance, leading to ohmic contact and the smallest contact resistance between a metal and a lightly doped n‐Ge. These devices also indicate that the metal‐induced gap states mechanism is responsible for the pinning. Based on the proposed technology, a wafer‐scale planar diode array is fabricated at room temperature without using the traditional ion‐implantation and annealing technology, achieving an on‐to‐off current ratio of 4.59 × 104. This work provides a new way of FLP modulation that helps to improve device performance with new materials.

Metal/Ge Schottky Barrier Modulation with C-containing Layer by Chemical Bath

Fermi Level Depinning by A C-Containing Layer in A Metal/Ge Structure by Using A Chemical Bath

Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film

Schottky-Barrier Height Modulation of Metal/In0.53ga0.47as Interfaces by Insertion of Atomic-Layer Deposited Ultrathin Al2o3

Schottky Barrier Height Engineering In $β$-Ga$_2$O$_3$ Using SiO$_2$ Interlayer Dielectric

Reduced Schottky Barrier Height at Metal/cvd-Grown MoTe2 Interface

Reduced Schottky barrier height at metal/CVD-grown MoTe<sub>2</sub> interface

Exploring Charge Transfer and Schottky Barrier Modulation at Monolayer Ge 2 Sb 2 Te 5 -Metal Interfaces

Exploring charge transfer and schottky barrier modulation at monolayer Ge2Sb2Te5-metal interfaces

Insertion Of An Ultrathin Al2o3 Interfacial Layer For Schottky Barrier Height Reduction In Ws2 Field-Effect Transistors

Fermi‐Level Depinning in Metal/Ge Junctions by Inserting a Carbon Nanotube Layer

Revealing the Weak Fermi Level Pinning Effect of 2D Semiconductor/2d Metal Contact: A Case of Monolayer In2Ge2Te6 and Its Janus Structure In2Ge2Te3Se3

Hybrid single-layer/bulk tungsten diselenide transistors by lithographic encoding of material thickness in chemical vapor deposition

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Effective Schottky Barrier Height Modulation by an Ultrathin Passivation Layer of Geoxny for Al/N-Ge(100) Contact

A graphene/Janus B 2 P 6 heterostructure with a controllable Schottky barrier via interlayer distance and electric field