Abstract:In this paper, a model is built to investigate the linearity of silicon carrier depletion based Mach-Zehnder modulators (MZMs). By approximating the nonlinear electro-optical response of a PN junction with a fourth-order polynomial, the model quantitatively calculates the modulation linearity of three different MZM configurations that have been widely used in analog optical links, i.e., single, dual-parallel, and dual-series MZMs, and qualitatively explains their respective operation mechanisms to suppress the third-order intermodulation distortion. The optimal operation condition of each configuration is derived to enhance the first-order harmonic component and suppress the nonlinear distortion. A fair comparison is performed between the three configurations in terms of their robustness, footprint, strength of the first-order harmonic component, stability, and tolerance against variations of driving RT power and control error, and so on. The result indicates that the dual-series MZM represents a reasonable tradeoff between these performance characteristics of interests.

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Linearization of Mach-Zehnder Modulator Using Microring-Based All-Pass Filter

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Linearity of Microring-assisted Push-Pull Mach-Zehnder Intensity Modulator

Influence Of Loss On Linearity Of Microring-Assisted Mach-Zehnder Modulator

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Inter-Modulation Distortion Analysis for Single-Drive Mach-Zehnder Modulator

High speed silicon Mach-Zehnder modulator based on interleaved PN junctions.

High-speed, low-loss silicon Mach-Zehnder modulators with doping optimization.

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High Linearity Silicon Modulator Capable of Actively Compensating Input Distortion.