Abstract:Silicon quantum dot (Si QD) tandem solar cell is a promising cell structure for realising high efficiency at low cost. The tandem solar cell effectively harnesses energy from the solar spectrum by stacking two or more cells together in the order of descending band gaps. Due to quantum confinement, the band gap of silicon based nanostructures such as Si QDs can be tailored by varying the size of the QDs. Solar cells and light emitting diodes based on Si QDs have been realised in experiments. However, current crowding due to high lateral resistance remains to be a major problem for Si QD devices grown on quartz substrates. Annealed silicon rich carbide (SRC), owing to its electrical conductivity, thermal stability and energy band gap compatible with Si QD cell fabrication, has the potential to overcome this problem. Further, this quasi-transparent thin-film can be used as either substrate or superstrate of a Si QD solar cell and therefore provides flexibility in cell structure design. Here, we investigate the physical, optical and electrical properties of the new material as functions of silicon concentration and doping conditions via a number of characterisation techniques including X-ray diffraction, Raman spectroscopy, ultraviolet-visible-infrared spectroscopy and four-point probe measurement. Some discoveries, including the lower crystallisation temperature of SiC within SRC, are also discussed. The research may provide some insight into the optimisation of annealed SRC as the new conductive material for Si QD solar cell and may boost the final arrival of all-silicon tandem solar cell.

Enhancing The Efficiency Of Multicrystalline Silicon Solar Cells By The Inkjet Printing Of Silicon-Quantum-Dot Ink

Spin-coating Silicon-Quantum-dot Ink to Improve Solar Cell Efficiency

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Silicon and Germanium Nanocrystal Inks for Low-Cost Solar Cells

Application of Silicon Nanocrystals in Solar Cells

Solar Cells: Perovskite and Organic Solar Cells Fabricated by Inkjet Printing: Progress and Prospects (adv. Funct. Mater. 41/2017)

Improvement of the efficiency and stability of inkjet‐printed green quantum dot light‐emitting diodes by controlling the extra shell of quantum dot

Solvent Inkjet Printing Process for the Fabrication of Polymer Solar Cells

Conductive Colloidal Perovskite Quantum Dot Inks Towards Fast Printing of Solar Cells

Development of Phosphorus-Doped Nanoscale Poly-Si Passivating Contacts via Inkjet Printing for Application in Silicon Solar Cells

Realization of Improved Efficiency on Nanostructured Multicrystalline Silicon Solar Cells for Mass Production

Seed-assisted Cast Quasi-Single Crystalline Silicon for Photovoltaic Application: Towards High Efficiency and Low Cost Silicon Solar Cells

Enhancement of Si-Based Solar Cell Efficiency Via Nanostructure Integration

Elimination of Drying‐Dependent Component Deviation Using a Composite Solvent Strategy Enables High‐Performance Inkjet‐Printed Organic Solar Cells with Efficiency Approaching 16%

Enhanced Conversion Efficiency in Si Solar Cells Employing Photoluminescent Down-Shifting CdSe/CdS Core/shell Quantum Dots

Highly Stabilized Quantum Dot Ink for Efficient Infrared Light Absorbing Solar Cells

One‐Step Inkjet Printed Perovskite in Air for Efficient Light Harvesting (solar RRL 2∕2018)

Achieving high performance InP quantum dot light-emitting devices by using inkjet printing