Preparation Of Gamma-Gd2s3 Via Thermolysis Of Gd[S2cn(C4h8)](3)Center Dot Phen Coordination

Luo Xixian,Ma Lubin,Xing Mingming,Fu Yao,Sun Min,Tao Pang
DOI: https://doi.org/10.1016/S1002-0721(12)60134-3
IF: 4.632
2012-01-01
Journal of Rare Earths
Abstract:Pure gamma-Gd2S3 was synthesized by the thermolysis of a single Gd[S2CN(C4H8)](3)center dot phen complex precursor in a flow of argon carrier gas containin gsulfur vapor. The complex precursor was decomposed into amorphous Gd2S3 and carbon 350 degrees C. Crystalling gamma Gd2S2 could be achieved at temperature exceeding 600 degrees C, and the obtained gamma-Gd2S3 presented a very high degree of crystallinity at 800 degrees C. Carbon prevented the formation of Gd2O2S impurity in the preparation o f gamma-Dg(2)S(3). However, the carbon balckened the product. At temperature >= 1000 degrees C, the residual carbon impurity could be efficiently removed by introducing sulfur into the system for the volatile CS2 could be formed in situ via the reaction of sulfur with the deposited carbon. In the meantime, S also promoted the crystallization of gamma-Gd(2)s(3) remarkablely.
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