Abstract:In this work, the gate controllability of WSe2 channel with varying thickness from monolayer to ten‐layer is investigated, by fabricating van der Waals contacted WSe2 devices. The findings demonstrate negligible hysteresis and excellent subthreshold swing observed when utilizing WSe2 channel thicknesses ≥ five‐layer. However, by reducing the WSe2 channel thickness below the trilayer, the subthreshold swing deviates from the thermal limit. The pursuit of near‐ideal subthreshold swing (SS) ≈ 60 mV dec−1 is a primary driving force to realize the power‐efficient field‐effect transistors (FETs). This challenge is particularly pronounced in 2D material‐based FETs, where the presence of a large interface trap density (Dit) imposes limitations on electrostatic control, consequently escalating power consumption. In this study, the gate controllability of 2D FETs is systematically analyzed by fabricating pre‐patterned van der Waals (vdW)‐contacted p‐FETs, varying the WSe2 channel thickness from monolayer to ten‐layer. As a result, the channel thickness is optimized to achieve efficient gate controllability while minimizing Dit. The findings demonstrate negligible hysteresis and excellent subthreshold swing (SSmin) close to the thermal limit (≈60 mV dec−1), with a corresponding Dit of ≈1010 cm−2 eV−1, comparable to Dit values observed in state‐of‐the‐art Si transistors, when utilizing WSe2 channel thicknesses ≥ five‐layer. However, reducing the WSe2 channel thickness below the trilayer, SSmin (≈91 mV dec−1) deviates from the thermal limit, attributed to a comparatively higher Dit (≈1011 cm−2 eV−1), despite the still lower than values reported for surface‐contacted 2D transistors. Furthermore, all devices exhibit consistent p‐type characteristics, featuring a high ION/IOFF ratio, high mobility, and excellent electrical stability confirmed over several months.

Ultra-High- k Ferroelectric BaTiO 3 Perovskite in the Gate Stack for Two-Dimensional WSe 2 p-Type High-Performance Transistors

Combining Freestanding Ferroelectric Perovskite Oxides with Two-Dimensional Semiconductors for High Performance Transistors

A ferroelectric relaxor polymer-enhanced p-type WSe2 transistor

Low Resistance Ohmic Contact to P-type Monolayer WSe2

2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p$^+$-WSe$_2$ Source

Unipolar P-Type Monolayer WSe2 Field-Effect Transistors with High Current Density and Low Contact Resistance Enabled by Van Der Waals Contacts

Wafer-Scale Growth of Single-Crystal 2D Semiconductor on Perovskite Oxides for High-Performance Transistors.

High-Performance p-Type Quasi-Ohmic of WSe2 Transistors Using Vanadium-Doped WSe2 as Intermediate Layer Contact

Flexible p-Type WSe2 Transistors with Alumina Top-Gate Dielectric

High-Performance Contact-Doped WSe2 Transistors Using TaSe2 Electrodes.

Tunable Snse2/Wse2 Heterostructure Tunneling Field Effect Transistor

High-Performance Bilayer WSe2 Pfet with Record Ids = 425 Μa/μm and Gm = 100 at Μs/μm Vds = -1 V by Direct Growth and Fabrication on SiO2 Substrate

2D-2D tunneling field-effect transistors using WSe2/SnSe2 heterostructures

Atomically Controlled Tunable Doping in High Performance WSe2 Devices

High‐performance solution‐processed 2D p‐type WSe2 transistors and circuits through molecular doping

Controlled Fabrication of Metallic MoO2 Nanosheets Towards High-Performance P-Type 2D Transistors.

2D Steep‐Slope Tunnel Field‐Effect Transistors Tuned by van der Waals Ferroelectrics

Flexible p-Type WSe 2 Transistors with Alumina Top-Gate Dielectric

Achieving Near‐Ideal Subthreshold Swing in P‐Type WSe2 Field‐Effect Transistors

High- κ perovskite membranes as insulators for two-dimensional transistors

Low Resistance Contact to P-Type Monolayer WSe2