Abstract:In the present work, the (Bi1-xCex)VO4 (x <= 0.6) ceramics were prepared via a solid-state reaction method and all the ceramic samples could be densified below 900 degrees C. From the X-ray diffraction analysis, it is found that a monoclinic scheelite solid solution can be formed in the range x <= 0.10. In the range 0.20 <= x <= 0.60, a composite region with both monoclinic scheelite and tetragonal zircon solid solutions was formed and the content of the zircon phase increased with the calcined or sintering temperature. The refined lattice parameters of (Bi0.9Ce0.1)VO4 are a = 5.1801(0) angstrom, b = 5.0992(1) angstrom, c = 11.6997(8) angstrom, and gamma = 90.346(0)degrees with the space group I1(1)2/b(15). The VO4 tetrahedron contracts with the substitution of Ce for Bi at the A site, and this helps to keep the specific tetrahedron chain stable in the monoclinic structure. The microwave dielectric permittivity was found to decrease linearly from 68 to about 26.6; meanwhile, the quality factor (Q(f)) value increased from 8000 GHz to around 23900 GHz as the x value increased from 0 to 0.60. The best microwave dielectric properties were obtained in a (Bi0.75Ce0.25)VO4 ceramic with a permittivity of similar to 47.9, a Q(f) value of similar to 18000 GHz, and a near-zero temperature coefficient of similar to+15 ppm/degrees C at a resonant frequency of around 7.6 GHz at room temperature. Infrared spectral analysis supported that the dielectric contribution for this system at microwave region could be attributed to the absorptions of structural phonon oscillations. This work presents a novel method to modify the temperature coefficient of BiVO4-type materials. This system of microwave dielectric ceramic might be an interesting candidate for microwave dielectric resonator and low-temperature cofired ceramic technology applications.

Influence of Sintering Process on the Microwave Dielectric Properties of Bi(V0.008nb0.992)O-4 Ceramics

Sintering behavior, phase evolution and microwave dielectric properties of Bi{Sb1-x(Nb0.992V0.008)x}O4 ceramics

Low-Firing Ba_4(Nd_(0.85)Bi_(0.15))_(28/3)Ti_(18)O_(54) Microwave Ceramics

Low-firing of BiSbO4 Microwave Dielectric Ceramic with V2O5–CuO Addition

Low temperature firing of BiSbO4 microwave dielectric ceramic with B2O3–CuO addition

The Effect of Sintering Atmosphere on the Microwave Dielectric Properties of V2O5 Doped BiNbO4 Ceramics

The effect of sintering atmosphere on V 2 O 5 substituted BiNbO 4 microwave ceramics

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The Effect of Sintering Atmosphere on V2O5 Substituted BiNbO4 Microwave Ceramics

Temperature stable high K microwave dielectric ceramics of Bi 3 NbO 7 doped by V 2 O 5

Microwave Dielectric Properties of Low-Firing BiNbO 4 Ceramics with V 2 O 5 Substitution

Microwave Properties of Low-Fired Li2ZnTi3O8 Ceramics Doped with CuO–Bi2O3–V2O5

Influence of V substitutions on sintering behaviors and microwave dielectric properties of Ba4LiNb3O12 ceramic

Microwave Dielectric Properties and Co-Firing of Binbo4 Ceramics with Cuo Substitution

Low-fired BiNbO4 microwave dielectric ceramics modified by CuV2O6 addition sintered in N2 atmosphere

Microwave Dielectric Properties Of A Low-Firing Ba2biv3o11 Ceramic

Low-Temperature Sintering and Processing of Microwave Dielectric aBaO plus bNb(2)O(5) Ceramics

Influence Of Ce Substitution For Bi In Bivo4 And The Impact On The Phase Evolution And Microwave Dielectric Properties

Effects of Microwave Sintering Power on Microstructure, Dielectric, Ferroelectric and Magnetic Properties of Bismuth Ferrite Ceramics

Effect of ZnO Ratio on Sintering Behavior and Microwave Dielectric Properties of BaO–ZnO–TiO2 Ceramics

Sintering behavior and mechanism of Bi‐Zn‐Nb‐O microwave dielectric ceramics