Abstract:The effects of inversion asymmetry on the anisotropic optical transition in the presence of electric field (Pockels effect) in GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As quantum wells and superlattices are investigated theoretically. Within an 8\ifmmode\times\else\texttimes\fi{}8 k\ensuremath{\cdot}p effective mass Hamiltonian formalism, in which the linear k, ${\mathit{k}}^{3}$, \ensuremath{\epsilon} (strain due to the piezoelectric effect), \ensuremath{\epsilon}k, and Rashba terms are taken into account, we have derived the renormalized effective Hamiltonian for the electron and hole, respectively. The effects of the inversion asymmetry and the hole mixing on the spin-split subband structures and the dependence of optical transition matrix elements on the polarization of incident light are fully presented. The microscopic model clearly shows that the inversion asymmetry is responsible for the Pockels effect. The roles played by the hole mixing in the enhanced quantum well Pockels effect mediated by the electron-hole pairs are shown by our calculations. Thus, we develop a theory with exciton states with eight spin components (due to the broken twofold degeneracy of the electrons) in the quantum well and calculate the excitonic spectra. The symmetry analysis and numerical results indicate that the excitonic anisotropic behavior results from the interference between different spin components of holes, which, owing to the heavy- and light-hole mixing, is enhanced significantly compared with the bulk material, especially for those exciton states whose dominant component does not coincide with its optically active component. Comparison between theory and experiment is discussed.

Optical transitions from bound to extended states in a single quantum well with symmetrical barriers

Novel formula of effective width of quantum well structures

Optical Transitions In Ganas/Gaas Single Quantum Well

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Intersubband optical absorption of electrons in double parabolic quantum wells of Al x Ga 1− x As/Al y Ga 1− y As

Linear and Nonlinear Intersubband Optical Absorption in A Strained Double Barrier Quantum Well

Studies on Linear and Nonlinear Intersubband Optical Absorptions in A Wurtzite Algan/Gan Coupling Quantum Well

Study Of Optical Properties In Gaas1-Xsbx/Gaas Single Quantum Wells

Influence of Width of Left Well on Intersubband Transitions in AlxGa1−x N/GaN Double Quantum Wells

Piezomodulated-reflectivity study of GaAs/Al0.29Ga0.71As single quantum well

Inversion Asymmetry, Hole Mixing, and Enhanced Pockels Effect in Quantum Wells and Superlattices.

Study of Optical Properties in GaAs1-xSbx/GaAssingle Quant Um Wells

Intersubband Optical Absorption in Strained Double Barrier Quantum Well Infrared Photodetectors

Oscillator Strength and Optical Selection Rule of Excitons in Quantum Wells

Intersubband Transitions in InGaAsN/GaAs Quantum Wells

Intersubband optical absorptions of a GaN-based step quantum well with built-in electric field

Optical Study on the Coupled GaAsSb/GaAs Double Quantum Wells

Influence of structure and doping concentration of AlxGa1-xN/GaN double quantum wells on wavelength and absorption coefficient of intersubband transitions

Infrared-Absorption Due To 2-Dimensional-Electron-Gas Collective Excitation In Gaas/Alxga1-Xas Multiple-Quantum-Well Structures

Exciton Spectra In Gaas/Ga1-Xalxas Quantum Wells In An Externally Applied Electric-Field