Abstract:Storage-class memory (SCM) combines the benefits of a solid-state memory, such as high-performance and robustness, with the archival capabilities and low cost of conventional hard-disk magnetic storage. Among candidate solid-state nonvolatile memory technologies that could potentially be used to construct SCM, flash memory is a well-established technology and have been widely used in commercially available SCM incarnations. Flash-based SCM enables much better tradeoffs between performance, space and power than disk-based systems. However, write endurance is a significant challenge for a flash-based SCM (each act of writing a bit may slightly damage a cell, so one flash cell can be written 10^4--10^5 times, depending on the flash technology, before it becomes unusable). This is a well-documented problem and has received a lot of attention by manufactures that are using some combination of write reduction and wear-leveling techniques for achieving longer lifetime. In an effort to improve flash lifetime, first, by quantifying data longevity in an SCM, we show that a majority of the data stored in a solid-state SCM do not require long retention times provided by flash memory (i.e., up to 10 years in modern devices); second, by exploiting retention time relaxation, we propose a novel mechanism, called Dense-SLC (D-SLC), which enables us perform multiple writes into a cell during each erase cycle for lifetime extension; and finally, we discuss the required changes in the flash management software (FTL) in order to use this characteristic for extending the lifetime of the solid-state part of an SCM. Using an extensive simulation-based analysis of a flash-based SCM, we demonstrate that D-SLC is able to significantly improve device lifetime (between 5.1X and 8.6X) with no performance overhead and also very small changes at the FTL software.

Error Model Guided Joint Performance and Endurance Optimization for Flash Memory

Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities

Adaptive Energy-Aware Design Of A Multi-Bank Flash-Memory Storage System

GC-ARM: Garbage Collection-Aware RAM Management for Flash Based Solid State Drives

Cooperating Virtual Memory and Write Buffer Management for Flash-Based Storage Systems

Toward a Unified Performance and Power Consumption NAND Flash Memory Model of Embedded and Solid State Secondary Storage Systems

Exploiting Data Longevity for Enhancing the Lifetime of Flash-based Storage Class Memory

Dynamic Voltage Scaling of Flash Memory Storage Systems for Low-Power Real-Time Embedded Systems

Enhancing Endurance of Huge-Capacity Flash Storage Systems by Selectively Replacing Data Blocks.

An Effective Dynamic Wear Leveling In The Application Of Solid State Drives

Analysis and Optimization of Temporary Read Errors in 3D NAND Flash Memories

A Hybrid Solid-State Storage Architecture For The Performance, Energy Consumption, And Lifetime Improvement

Extending the lifetime of flash-based storage through reducing write amplification from file systems.

Modeling Retention Errors of 3D NAND Flash for Optimizing Data Placement

An Efficient Dynamic Wear Leveling for Huge-Capacity Flash Storage Systems with Cache.

System-Level Early Power Estimation for Memory Subsystem in Embedded Systems

Performance Enhancement of NAND Flash Using Unequal Error Protection.

Improving energy efficiency of write-asymmetric memories by log style write.

A Cache Management Strategy to Replace Wear Leveling Techniques for Embedded Flash Memory

Architectural Techniques for Improving NAND Flash Memory Reliability

Observation and Optimization on Garbage Collection of Flash Memories: The View in Performance Cliff