Effects of Oxygen Pressure on Absorption Property and the Structure of Mn-Doped ZnO Thin Film

Yang Bingchu,Zhang Li,Ma Xuelong,Yan Jiantang

DOI: https://doi.org/10.3969/j.issn.1003-353X.2008.02.006

2008-01-01

Abstract:Zn0.93Mn0.07O thin film was grown on glass by DC magnetron sputtering,and the influences of oxygen partial pressure on the structure and absorption property of Zn0.93Mn0.07O film were investigated.XPS results reveal that the divalent Mn2+ ions take the place of most Zn2+ ions in ZnO lattice with few MnO2 doped.(XRD results indicate that the films are highly C-axis oriented,with minimum half high width and maximum crystal grain at the oxygen partial pressure of 0.4.Owing to Burstein-Moss(B-M) effect,the absorption spectrum shows that the blue-shift absorption edge transition happens at valence band level and conduction vacant band near or above the Fermi level,with the absorption band tailing which attributes to the d-d transitions of tetrahedral Mn2+ between the crystal-field-split 3d5 multiple energy level.The calculation result shows that bandgap is the widest when R is 0.4,caused by the weakness of exchange interaction.