Abstract:The equation of motion for the p-polarization field ina wurtzite GaN/AlN multilayer heterostructure is solved for thequasi-confined-optical-phonon modes based on thedielectric-continuum model and Loudon’s uniaxial crystal model.The polarization eigenvector, the dispersion relation of thequasi-confined-optical-phonon modes and theelectron-quasi-confined-phonon interaction Fröhlich-likeHamiltonian are derived. The analytical formulas can be directlyapplied to single/multiple quantum wells (QW’s) and superlattices.The electron-quasi-confined-phonon coupling functions areinvestigated for a given AlN/GaN/AlN single QW with full accountof the strains of the QW structures and the anisotropy effect ofwurtzite crystals. We find that there are two kinds ofquasi-confined-optical-phonon modes in the GaN/AlN QW’s: theGaN-layer quasi-confined-optical-phonon modes and the AlN-layerquasi-confined-optical-phonon modes. There are infinitequasi-confined-optical-phonon branches, labelled by a quantumnumber n (n=1,2,...), with definite symmetry with respectto the center of the AlN/GaN/AlN single QW for a given phonon wavenumber q. The dispersions of thequasi-confined-optical-phonon modes with smaller n are moreobvious than the ones with larger n. Moreover, the modes withsmaller n are much more important for theirelectron-quasi-confined-phonon interactions than those with largern. In most cases, it is enough to consider the modes with n≤8 for the electron-quasi-confined-phonon interactions in a singleGaN/AlN QW. The higher frequency modes are more significant thanthe lower ones. The long-wavelength quasi-confined-optical-phononmodes are much more important for theelectron-quasi-confined-phonon interactions. The GaN-layerquasi-confined-optical-phonon energies and theirelectron-quasi-confined-phonon interaction strength are markedlyincreased due to the strains of the QW structures. The influenceof the strains on the the AlN-layer electron-quasi-confined-phononinteractions can be ignored.

A Simple Description of Fröhlich Interaction in Cylindrical GaAs/AlAs Quantum Wires

Polar-optic Phonons and High-Field Electron Transport in Cylindrical GaAs/AlAs Quantum Wires.

Transfer Matrix Method For The Frohlich Electron-Interface Optical Phonon Interaction In Multilayer Coaxial Cylindrical Quantum-Well Wires

Fröhlich Electron-Interface Optical Phonon Interactions in N-Layer Low-dimensional Coupling Quantum Structures

Polar interface optical phonon modes and Fröhlich electron–phonon interaction Hamiltonians in wurtzite quantum well wires

Polar Oscillation of Interface and Surface Optical Phonons in Free-Standing Cylindrical Quantum-Well Wires

Fröhlich Electron-Interface Optical Phonon Interactions in <i>n</i>-Layer Low-dimensional Coupling Quantum Structures

Nonlinear Transport in Gaas/Alas Harmonically Confined Quantum Wires

Emission and Absorption of Confined and Interface Optical Phonons by Electrons in the Non-Linear Transport Regime of A Parabolic Quantum Wire

Electron Quasi-Confined-Optical-Phonon Interactions in Wurtzite Gan/Aln Quantum Wells

DISPERSIONS AND FRÖHLICH ELECTRON–PHONON INTERACTION HAMILTONIAN OF PROPAGATING OPTICAL PHONON MODES IN QUASI-ONE-DIMENSIONAL WURTZITEGaN-BASED QUANTUM WELL WIRES

Polar Interface and Surface Optical Vibration Spectra in Multi-Layer Wurtzite Quantum Wires: Transfer Matrix Method

Oscillating spectra of polar IO and SO phonons and electron–IO and SO phonon couplings in a freestanding wurtzite quantum wire

Polar Optical Phonon Modes and Fröhlich Electron-Phonon Interaction Hamiltonians in Coaxial Cylindrical Quantum Cables

Polar Vibration Spectra Of Interface Optical Phonons And Electron-Interface Optical Phonon Interactions In A Wurtzite Gan-Aln Nanowire

Fröhlich electron-interface and -propagating optical phonon interactions in a wurtzite multi-shell cylindrical heterostructure

POLAR VIBRATION SPECTRA OF INTERFACE AND SURFACE OPTICAL PHONONS AND THEIR FRÖHLICH ELECTRON-PHONON INTERACTIONS IN FREESTANDING SYMMETRICAL AND ASYMMETRICAL WURTZITE<font>GaN/Ga</font><sub>1-x</sub><font>Al</font><sub>x</sub><font>N</font>MULTI-LAYER HETEROSTRUCTURES

Interplay Between In-Plane and Flexural Phonons in Electronic Transport of Two-Dimensional Semiconductors

Electron Mobility in A Gaas/Alas Quantum Well with A Thin Alas Middle Barrier

Propagating Optical Phonons and Their Properties in GaN/AlN Quantum Wells

Dispersion of Interface Optical Phonons and Their Coupling with Electrons in Asymmetrical Wurtzite Gan/Ga1-Xalxn Quantum Wells