Characteristics of ZnMgO-based metal-semiconductor-metal photodetectors
Kewei Liu,Dezhen Shen,Jiying Zhang,YouMing Lü,Dayong Jiang,YanMin Zhao,Binghui Li,Dongxu Zhao,Zhenzhong Zhang,Bin Yao
DOI: https://doi.org/10.1117/12.790770
2008-01-01
Abstract:In recent years, ZnMgO semiconductor alloys, with a direct bandgap tunable between 3.37 eV and 7.8 eV, become one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper, we have fabricated metal-semiconductor-metal photodetectors on 1-μm thick Zn 0.8Mg0.2O films. The interdigital metal electrodes are 500 μm long and 5 μm wide with an interelectrode spacing 2 μm, 5 μm and 10 μm, respectively. Zn0.8Mg0.2O films were grown on quartz by ratio frequency magnetron sputtering at 500°C. Dark current, spectral responsivity and pulse response were carried out for the devices with different finger pitches. All the photodetectors showed the peak responsivity at 330 nm and the ultraviolet-visible rejection ratio (R330 nm/R400 nm) is more than four orders of magnitude at 3 V bias. For the device with 2 μm finger pitch, the detectivity was calculated as 4.2×1011 cm Hz 1/2/W at 330 nm. Furthermore, the transient response measurement for all devices revealed similar rise time of 10 ns. The 90%-10% fall times are 130 ns, 170 ns and 230 ns for the devices with different finger pitches of 2 μm, 5 μm and 10 μm, respectively..