Antiferromagnetic Coupling Driven by Bond Length Contraction Near the Ga1-xMnxN Film Surface.

Q Wang,Q Sun,P Jena,Y Kawazoe
DOI: https://doi.org/10.1103/physrevlett.93.155501
IF: 8.6
2004-01-01
Physical Review Letters
Abstract:Using first principles calculations based on gradient corrected density functional theory we show that Mn atoms, which couple ferromagnetically in bulk Ga1-xMnxN, couple antiferromagnetically on its surface. This change in magnetic behavior is brought about by a contraction of the Mn-Mn and Mn-N bond lengths, which is significantly greater on the surface than in the bulk. The present study provides new insight to the numerous conflicting experimental observations in Mn doped GaN systems.
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