Improved Resistance to Damage of Silicon Carbide-Whisker-Reinforced Silicon Nitride-Matrix Composites by Whisker-Oriented Alignment

Chang-an Wang,Yong Huang,Zhipeng Xie
DOI: https://doi.org/10.1111/j.1151-2916.2001.tb00624.x
IF: 4.186
2001-01-01
Journal of the American Ceramic Society
Abstract:The effects of whisker-oriented alignment on resistance to damage of SiC(w)/Si3N4 composites have been investigated by the Vickers indentation method and R-curve behavior. It is shown that increasing the degree of whisker-oriented alignment decreases the lengths of Vickers Impressions and indentation cracks. The results exhibit rising R-curve behaviors for the SiC(w)/Si3N4 composites with different degree of whisker-oriented alignment. Moreover, the initial crack length c(i), the threshold of crack growth resistance K-i, and the upper bound of crack growth resistance K-infinity change regularly with increasing degree of whisker-oriented alignment. All results suggest that the whisker-oriented alignment improves the resistance to damage of the composites, resulting in a more reliable and usable composite.
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