Analysis of IGBT Pseudodesaturation Effect Caused by Stray Parameters in DC Circuit Breaker
Hong Shen,Lei Qi,Xiangyu Zhang,Chongqing Jiao,Sheng Zhang,Li Liu
DOI: https://doi.org/10.1109/tie.2022.3229307
IF: 7.7
2023-04-18
IEEE Transactions on Industrial Electronics
Abstract:As a highly integrated high-voltage power electronic equipment in the power grid, the dc circuit breaker (dcCB) has misjudged overcurrent protection caused by the insulated gate bipolar translator (IGBT) pseudodesaturation effect (PDE) in dc short-circuit fault. To analyze the reasons for the effect, this article established a wide-band equivalent circuit model of a hybrid high-voltage dcCB at the initial stage of dc fault. And revealed the mechanism of PDE: the stray inductance of series-connected solid-state switches, the junction capacitance of metal oxide varistors, and the parasitic capacitance to the ground of dcCB form multiple resonant circuits. The external disturbance is converted into the interference of dcCB port through these stray parameters, and the interference would exceed the IGBT desaturation detection threshold. Furthermore, an equivalent experimental circuit that reproduces the electromagnetic interference of dcCB at the dc fault transient process was proposed, and the correctness of the mechanism analysis was verified by the scaled prototype of dcCB, the main resonance frequency error is less than 15%. Finally, the frequency domain and time domain characteristics of electromagnetic interference on the IGBT desaturation detection monitoring ports in 200 kV dcCB at the initial stage of dc fault were analyzed. Based on these characteristics, a scheme of adding a delay time to the overcurrent protection criterion to avoid electromagnetic interference was proposed, which is adopted by an industrial project.
automation & control systems,engineering, electrical & electronic,instruments & instrumentation