Thickness Dependence of In2O3: Sn Film Properties Deposited by Reactive Evaporation

LI Lin-na,XUE Jun-ming,ZHAO Ya-zhou,LI Yang-xian,GENG Xin-hua,ZHAO Ying
DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2008.01.041
2008-01-01
Abstract:The indium tin oxide films with different thickness have been prepared on glass substrates by reactive evaporation of In-Sn alloy with an oxygen pressure of 1.4×10-1 Pa and substrate temperature at 160℃.In this research,the deposition rate is 0.1nm/s.The best ITO films we obtained have electrical resistivity of 6.37×10-4Ω·cm,carrier concentration of 1.91×1020cm-3 and Hall mobility of 66.4cm2v-1s-1.The influence of thickness on structural,optical and electrical properties of the obtained films has been investigated.A-Si solar cells with ITO films as front contact were prepared.After optimization,a cell with open-circuit voltage of 0.79V,short-circuit current density of 10.13mA/cm2,fill factor of 0.648,and efficiency of 5.193% was achieved.
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