SPIN-ORBIT COUPLING AND SPIN HALL EFFECT IN SEMICONDUCTORS

常凯,杨文

DOI: https://doi.org/10.3321/j.issn:1000-0542.2008.03.002

2008-01-01

Abstract:We review the recent progress in the research on spin-orbit coupling and intrinsic spin Hall effect in semiconductor microstructures,including a detailed discussion of the physical origin of spin-orbit coupling in semiconductor microstructures and the intrinsic spin Hall effect in narrow-gap semiconductor quantum wells.We found that at large in-plane wave vectors,the widely used linear Rashba model in the literature misses an important feature of the Rashba spin splitting arising from the spin-orbit interaction: instead of increasing with increasing in-plane wave vector,it begins to decrease.This strong nonlinear behavior comes from the weakening of the interband coupling between the conduction and the valence bands.It leads to decreasing D'yakonov-Perel' spin relaxation rates at high energies,in qualitative disagreement with the predictions of the linear Rashba model.To account for the influence of such strong nonlinearity on the intrinsic spin Hall effect,we construct a unified theoretical framework in which the electron and the hole are treated on the same footing.Using this method,the nonlinearity of the Rashba effect can be incorporated non-perturbatively.We applied this method to narrow-gap CdHgTe/CdTe quantum wells with strong spin-orbit coupling.We found that by tuning the external electric field or the well width,the quantum phase transition and,consequently,the intrinsic spin Hall effect can be switched on or off.This work may provides a possible way for distinguishing the intrinsic spin Hall effect in experiments.