SPIN CURRENT AND SPIN HALL EFFECT IN SYSTEMS WITH SPIN-ORBIT COUPLING
JIN Pei-qing,LI You-quan
DOI: https://doi.org/10.3321/j.issn:1000-0542.2009.04.002
2009-01-01
Abstract:Generating,manipulating and detecting a spin current are regarded as main tasks of spintronics.Spin Hall effect provides an alternative route to generate the spin current in semiconductors without spin injection.However,the spin current does not conserve in systems with spin-orbit coupling.Recently,much attention has been absorbed on the understanding of such an issue.We review the recent research progresses on the spin current and spin Hall effect in systems with spin-orbit coupling.In terms of SU(2)gauge potentials,the naturally defined spin current obeys a covariant continuity equation.This equation plays a key role in keeping the consistency of the SU(2)Kubo formula with different gauge fixings.After introducing the SU(2)field strength tensor,the spin force that electrons experience in the presence of the SU(2)gauge fields can be easily obtained.It reduces to the Stern-Gerlach force if only the U(1)magnetic field is present.Since there are seemly less application of the extrinsic spin Hall effect which depends on the impurity scattering,more attentions were paid to the intrinsic spin Hall effect recently.In this effect,aU(1)electric field can induce a transverse spin current and lateral spin accumulations in nonmagnetic semiconductors.The spin Hall effect has been observed in both semiconductors and metals.The spin Hall conductivity is a universal constant in the clean twodimensional electron gas,while the impurity effect on this conductivity used to be quite controversial which can be resolved if the dephasing effect is considered.In this review,the spin transport in the bilayer electron gas is also discussed.Both the spin Hall conductivity and tunnelling spin conductivity exhibit resonant peaks at the energy-degeneracy point.When taking into account the difference of strengthes of impurity potentials between layers,the tunnelling spin conductivity manifests an asymmetric feature with respect to the gate voltage,i.e.,a spin diode behavior is expected to occur in this bilayer system.