Thermal annealing induced high performance light-emitting diodes based on poly(9,9′-dioctyl fluorene)

Gufeng He,Yongfang Li,Tzung-Fang Guo,Yang Yang
DOI: https://doi.org/10.1016/S0379-6779(02)01135-9
IF: 4
2003-01-01
Synthetic Metals
Abstract:Poly(9,9'-dioctyl fluorene) was used as an emitting material in the light-emitting diodes. After annealing at a high temperature, such as 100degreesC, the device shows higher performance than the controlled device. This may be attributed to the surface structures and polymer morphology. UV-vis and photoluminescence spectra were used to study the phase and photophysical characteristics. Also, reflection-absorption Fourier-transform infrared spectroscopy (RA-FTIR) has been performed on the samples to investigate how the device performance was influenced.
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