Novel Millimeter-Wave Power Combining Utilizing Wafer Level Packaging Technology
Yingqian Huang,Xinyi Hu,Jinfang Zhou,Zhiguo Shi,Kangsheng Chen
2011-01-01
Abstract:It is extremely difficult to obtain high output power with silicon based processes, which presents one of the greatest challenges for realizing fully integrated transceivers, especially at millimeter-wave frequencies. For this reason, various power combining methods have been proposed to achieve higher power levels.In this paper, a novel power combining method suitable for millimeter-wave applications is presented. The power combining network is synthesized in package utilizing wafer level packaging technology, with an array of power sources of moderate output power capability assumed to be distributed on chip, which means applying further combining in addition to existing on-chip power combining scheme for potentially even higher output power is possible.The power combining network is composed of more basic power combining units, each consisting of one substrate integrated waveguide (SIW) resonator coupling four lambda/4 standing-wave resonators, which can be synthesized using two quarter-wavelength vertical vias with one end open and the other end shorted. For power combining purpose, the open end of each lambda/4 resonator is connected to the differential output of one on-chip power source, while the shorted end is realized using one of the two metal plates of the SIW resonator. The coupling between the SIW resonator and lambda/4 resonators is through slotting on the metal plate to allow magnetic leakage so that oscillation in lambda/4 resonators will excite the SIW resonator to oscillate. As the quality factor of the SIW resonator is much larger than those of lambda/4 resonators, energy is mainly confined in the cavity of the SIW resonator so that power combing is achieved.Example design for 60 GHz application is detailed in the paper with simulation results using commercial CST software showing the effectiveness of the power combining method.