Abstract:The continuous and aggressive downscaling of conventional CMOS devices has been driving the vast growth of ICs over the last few decades. As the CMOS downscaling approaches the fundamental limits, novel device architectures such as metallic source/drain Schottky barrier MOSFET (SB-MOSFET) and SB-FinFET are probably needed to further push the ultimate downscaling. The ultimate goal of this thesis is to integrate metallic Ni1-xPtx silicide (x=0~1) source/drain into SB-MOSFET and SB-FinFET, with an emphasis on both material and processing issues related to the integration of Ni1-xPtx silicides towards competitive devices. First, the effects of both carbon (C) and nitrogen (N) on the formation and on the Schottky barrier height (SBH) of NiSi are studied. The presence of both C and N is found to improve the poor thermal stability of NiSi significantly. The present work also explores dopant segregation (DS) using B and As for the NiSi/Si contact system. The effects of C and N implantation into the Si substrate prior to the NiSi formation are examined, and it is found that the presence of C yields positive effects in helping reduce the effective SBH to 0.1-0.2 eV for both conduction polarities. In order to unveil the mechanism of SBH tuning by DS, the variation of specific contact resistivity between silicide and Si substrates by DS is monitored. The formation of a thin interfacial dipole layer at silicide/Si interface is confirmed to be the reason of SBH modification. Second, a systematic experimental study is performed for Ni1-xPtx silicide (x=0~1) films aiming at the integration into SB-MOSFET. A distinct behavior is found for the formation of Ni silicide films. Epitaxially aligned NiSi2-y films readily grow and exhibit extraordinary morphological stability up to 800 oC when the thickness of deposited Ni (tNi) <4 nm. Polycrystalline NiSi films form and tend to agglomerate at lower temperatures for thinner films for tNi≥4 nm. Such a distinct annealing behavior is absent for the formation of Pt silicide films with all thicknesses of deposited Pt. The addition of Pt into Ni supports the above observations. Surface energy is discussed as the cause responsible for the distinct behavior in phase formation and morphological stability. Finally, three different Ni-SALICIDE schemes towards a controllable NiSi-based metallic source/drain process without severe lateral encroachment of NiSi are carried out. All of them are found to be effective in controlling the lateral encroachment. Combined with DS technology, both n- and p-types of NiSi source/drain SB-MOSFETs with excellent performance are fabricated successfully. By using the reproducible sidewall transfer lithography (STL) technology developed at KTH, PtSi source/drain SB-FinFET is also realized in this thesis. With As DS, the characteristics of PtSi source/drain SB-FinFET are transformed from p-type to n-type. This thesis work places Ni1-xPtx (x=0~1) silicides SB-MOSFETs as a competitive candidate for future CMOS technology.

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The Influence of a TiN Cap Layer on a Titanium-S Alici De Process: Titanium Vs Titanium Nitride/Titanium

Characterization of a Self-Aligned RTP Titanium Disilicide MOS Process: Titanium-Silicon Dioxide Interaction

Process optimization of titanium self-aligned silicide formation through evaluation of sheet resistance by design of experiment methodology

Diffusion Behavior of Dual Capping Layers in TiN/LaN/AlN/HfSiOx/Si Stack

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Analysis of Al diffusion processes in TiN barrier layers for the application in silicon solar cell metallization

Surface-Morphology Study of Titanium Silicide Formed on Polycrystalline Silicon

Improvement of Thermal Stability of Nickel Silicide Using Co-Sputtering of Ni and Ti on Boron Cluster Implanted Ultra-Shallow Junction for Nanoscale CMOS Technology

Unfolding an Elusive Area-Selective Deposition Process: Atomic Layer Deposition of TiO 2 and TiON on SiN vs SiO 2

Area-Selective Atomic Layer Deposition of TiN Using Trimethoxy(octadecyl)silane as a Passivation Layer

A Novel Low Temperature Self-Aligned Ti Silicide Technology for Sub-0.18 Μm CMOS Devices

Cost-Effective Formation of Ti/Ni/Ti/Au Ohmic Contacts to N-Type SiC Using SiO2 Encapsulation Layer During Phosphorous Implant Activation

Mobility improvement of LTPS thin film transistor using stacked capping layer

Self-aligned Silicides for Ohmic Contacts in Complementary Metal–oxide–semiconductor Technology: TiSi2, CoSi2, and NiSi

Ti-Capping Andheating Ramp-Rate Effects Onni-Silicide FilmandInterface

Ti-capping and heating ramp-rate effects on Ni-silicide film and interface

Enhanced Device Performance of GaN High Electron Mobility Transistors with in Situ Crystalline SiN Cap Layer

Atomic Layer Deposition Tin Barrier Layers For Through Silicon Via Applications