Exchange anisotropy in NiFe/FeMn bilayers studied by planar Hall effect

Z.Q. Lu,G. Pan,W.Y. Lai,D.J. Mapps,W.W. Clegg
DOI: https://doi.org/10.1016/S0304-8853(01)00970-2
IF: 3.097
2002-01-01
Journal of Magnetism and Magnetic Materials
Abstract:Planar Hall effect (PHE) in NiFe/FeMn films was experimentally measured and simulated using Boltzmann transport equation. PHE was found to be an effective method to characterize the exchange anisotropy in NiFe/FeMn films, from which the unidirectional exchange field and the magnetization reversal process of the sample can be determined. The effective uniaxial anisotropy field H-Keff, the effective unidirectional anisotropy field H-ua and the AF domain wall energy H-ua were obtained by fitting the experimental results. We found that in the NiFe/FeMn system, the parameters H-Keff, H-ua and H-w had the same values in reversible and irreversible measurements, and the domain wall energy in AF layer was much larger than interfacial unidirectional anisotropy. (C) 2002 Elsevier Science B.V. All rights reserved.
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