Abstract:As process technology scales down to very deep sub-micron (VDSM) in semiconductor manufacturing technology, intrinsic size becomes close to or even shorter than the wavelength used for optical lithography. Thus, some distortions and deformations are introduced by optical proximity effects (OPE) mainly caused by the diffraction and interference of exposure light when layout patterns on a mask are transcribed to a wafer, which influence on the yield and performance of IC circuit. In order to compensate for the deformations, optical proximity correction (OPC) is the most commonly used methodology. Presently, the OPC method is to use a unitary toleration on the whole chip layer, which makes the run time of OPC algorithm longer, causes the size of GDSII files to follow exponential growth, and results in the cost of making mask grow immensely. Firstly, this paper proposes a self-adaptation OPC method with preprocessing function of patterns classification. According to the need of the correction precision, the OPC system divides patterns corrected into two groups with different toleration: critical patterns and general patterns, which enhance the efficiency of the OPC approach. Secondly, a model-based OPC method is presented based on pattern subsection and classification, which keeps the precision of the correction as well as enhances the efficiency. We also propose a rule-based OPC method with general, concise and complete correction rules, and achieve automatic-built rules-based and its looking-up. Thirdly, we also implement an OPC system, called MR-OPC; the MR-OPC system integrates both rule-based OPC and model-based OPC into a whole, so it can solve the confliction between the efficiency and precision. Experimental results show that the MR-OPC system we suggested has advantages of the efficiency and expansibility.

A Feasible Model-Based Opc Algorithm Using Jacobian Matrix of Intensity Distribution Functions

A Sparse Matrix Model-Based Optical Proximity Correction Algorithm with Model-Based Mapping Between Segments and Control Sites

A Fast OPC Algorithm for IC Layout Based on 1-D Cells after Optimization of Gap Distribution

Investigation on MBOPC convergence improvement with location-dependent correction factors aided by machine learning

Model-Based Dynamic Dissection in OPC

A New Method of Implementing Hierarchical OPC

Application of Optical Proximity Correction Technology

Embedded MPC Controller Based on Interior‐Point Method with Convergence Depth Control

Differentiable Edge-based OPC

Efficient measurement and optical proximity correction modeling to catch lithography pattern shift issues of arbitrarily distributed hole layer

Fast Level-Set-Based Inverse Lithography Algorithm for Process Robustness Improvement and Its Application

Pseudo Feedforward Dynamic Matrix Control Algorithm for Desired Closed-Loop Performance in MPC Systems

Edge-based near-field photolithography optical proximity effect correction technique

Self-Evolving Offset-Free Model Predictive Control with Model-Plant Mismatch for Dynamic Working-Point Change Tasks in Industrial Processes

Segmentation Optimization Method for Optical Proximity Correction Based on Lithography Model

Position-independent Thermal Error Compensation and Evaluation Based on Linear Correlation Filtering Technology

A Multistep Multiellipsoid Approach of the Dynamic Output Feedback MPC.

Optimization of Graphical Parameter Extraction Algorithm for Chip-Level CMP Prediction Model Based on Effective Planarization Length

Some studies on the interactions and propagating effects in OPC

OPC model calibration based on circle-sampling theorem

A highly effective and efficient cost-function-reduction method for inverse lithography technique