Magnetization Reversal Mechanism of Bilayered Magnetic Anti-Dot Lattices
N. G. Deshpande,M. S. Seo,S. J. Lee,L. Y. Chen,K. W. Kim,J. Y. Rhee,Y. H. Kim,Y. P. Lee
DOI: https://doi.org/10.1063/1.3673542
IF: 2.877
2012-01-01
Journal of Applied Physics
Abstract:Micropatterned ordered arrays of cobalt (Co) anti-dots on a uniform thin nickel (Ni) underlayer, known as bilayered magnetic anti-dot lattices (BMALs), were fabricated using photolithography and a controlled wet-etching process. The magnetization reversals in a rhomboid BMAL under the application of a field along 0° (i.e., easy axis) and 90° (i.e., hard axis) were investigated using field-dependent magnetic-force microscopy, and the angular dependence of squareness (Mr/Ms) and coercivity (Hc) were studied using magneto-optical Kerr effects. Although the magnetic reversals were dominated by domain-wall motions or domain rotations, reflecting the easy and hard axis characteristics, various other complex reversal processes were also found that depends on the history of the field application. The angular dependence of Mr/Ms and Hc in a BMAL system was completely different from that in a single-layer, Co magnetic anti-dot lattice. Interestingly, a unidirectional and uniaxial component representing the overall magnetic anisotropy was revealed in the BMAL system. The details of these complicated magnetization behaviors were investigated and elaborated.