Influence of SiO32‐ Impurity on Growth Habit of Potassium Dihydrogen Phosphate Crystal

Jianxu Ding,Yongqiang Lu,Shenglai Wang,Xiaoming Mu,Qingtian Gu,Zhengping Wang,Yun Sun,Xiaoling Liang,Xinguang Xu,Xun Sun,Wenjie Liu,Guangxia Liu,Shengjun Zhu
DOI: https://doi.org/10.1002/crat.201000298
2010-01-01
Crystal Research and Technology
Abstract:By altering the concentration of silicate (SiO32-) impurity in the solution, a series of potassium dihydrogen phosphate (KDP) crystals was obtained by the conventional temperature cooling and the rapid growth methods, respectively. It was observed that the presence of SiO32- made KDP crystals tapering in conventional cooling method, while more SiO32- induced inclusions at prismatic sectors in the rapid growth method. Laser-polarization-interference results showed that SiO32- extended the dead zone and reduced the growth rate of (100) face of KDP crystals. The negative influence of SiO32- on the growth was considered absolutely similar to the effect of cations. It was also suggested that the stability of solution doped with SiO32- was improved without seed crystals, while it was destructed with seed crystals. The inhibition mechanism was analyzed in terms of SiO32- absorption on (100) face. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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