Abstract:Charge carrier mobility is one of the important parameters to measure to compare the behavior of different organic transistors. A high carrier mobility is essential for the organic transistors to operate at a high frequency. Recently, there have been discussions on the mobility overestimation due to gate bias dependent Schottky contacts which lead to severe nonlinearities in the current voltage characteristics, i.e., the double-slope feature. In addition, an accurate evaluation of the carrier mobility from the transfer curves requires accurate parameters such as channel dimensions or dielectric capacitance. Many of the organic field-effect transistors (OFETs) reported in the literature employ unpatterned semiconductor active layers or gate/gate dielectrics where the effective channel dimensions significantly deviate from the values defined by the source drain electrodes due to the fringe effect. To reveal the importance of the fringe effect on the mobility evaluation, here we perform a systematic investigation of OFETs with vacuum-deposited active layers in relation to the fringe effect, followed by the same analysis of solution-processed OFETs with tunable crystal morphology. By continuously narrowing down the active layer toward the actual channel region defined by the source drain electrodes, we show that the carrier mobilities are 110% and 60% overestimated in the vacuum-deposited and solution-processed devices, respectively, even with ideal linearity in the transfer curves. Herein, we suggest a model to evaluate the degree of mobility overestimation in these two families of OFETs and provide the guidelines for the design of the device geometry and channel dimensions to minimize mobility overestimation induced by the fringe effect. In our solution-processed OFETs, we conclude that a large channel width to length ratio over 20 is essential to alleviate the fringe current outside the channel, while a channel ratio greater than 40 is needed for the OFETs with vacuum-deposited semiconductor layers.

Carrier Localization on Surfaces of Organic Semiconductors Gated with Electrolytes

Charge Saturation and Intrinsic Doping in Electrolyte-Gated Organic Semiconductors

Probing Coulomb Interactions on Charge Transport in Few‐Layer Organic Crystalline Semiconductors by the Gated Van Der Pauw Method

Molecular Layer-defined Transition of Carrier Distribution and Correlation with Transport in Organic Crystalline Semiconductors.

Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit.

Field-induced charge transport at the surface of pentacene single crystals: A method to study charge dynamics of two-dimensional electron systems in organic crystals

Electrostatic Modulation of the Lateral Carrier Density Profile in Field Effect Devices with Nonlinear Dielectrics

Carrier–Carrier Repulsion Limits the Conductivity of N‐Doped Organic Semiconductors

Finite Temperature TD-DMRG for the Carrier Mobility of Organic Semiconductors

Experimental Observation of Ultrahigh Mobility Anisotropy of Organic Semiconductors in the Two-Dimensional Limit

Optical conductivity and optical effective mass in a high-mobility organic semiconductor: Implications for the nature of charge transport

Transport in organic semiconductors in large electric fields: From thermal activation to field emission

Impact of Large Gate Voltages and Ultrathin Polymer Electrolytes on Carrier Density in Electric-Double-Layer-Gated Two-Dimensional Crystal Transistors

Anisotropic Charge Transfer Mobility Properties of Systems with Large Conjugation Core and Peripheral Phenyl Rings

Surface doping of rubrene single crystals by molecular electron donors and acceptors

Thickness Dependence Of Carrier Mobility And The Interface Trap Free Energy Investigated By Impedance Spectroscopy In Organic Semiconductors

Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors

Elimination of charge-carrier trapping by molecular design

Transport of Carriers in a Semiconductor Polymer Random Chain: a Renormalization Approach

Overestimation of Carrier Mobility in Organic Thin Film Transistors Due to Unaccounted Fringe Currents

Charge Transport in Organic Molecular Semiconductors from First Principles: The Band-Like Hole Mobility in Naphthalene Crystal