A Novel Diode Linearizer for SiGe HBT Power Amplifier

Haiwen Liu,Toshihiko Yoshimasu,Satoshi Kurachi,Nobuyuki Ito,Koji Yonemura
DOI: https://doi.org/10.1002/mop.21681
IF: 1.311
2006-01-01
Microwave and Optical Technology Letters
Abstract:In this paper, a novel diode linearizer to keep the base voltage of SiGe HBT power amplifier (PA) constant in the large-signal region is introduced. The results show that the output P(IdB), and power-added efficiency (PAE) are improved by 4.9 dBm and 22.8%, respectively. At an input power of 20 dBm, the gain compression and phase distortion of the linearized PA is 2.1 dB and 1.1 degrees, respectively, compared with 5.0 dB and 20.4 degrees for the conventional PA. Also, the improved ACPR is given. (c) 2006 Wiley Periodicals, Inc.
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