Interface Chemistry and Surface Morphology Evolution Study for InAs/Al2O3 Stacks Upon in Situ Ultrahigh Vacuum Annealing
Xinglu Wang,Xiaoye Qin,Wen Wang,Yue Liu,Xiaoran Shi,Yong Sun,Chen Liu,Jiali Zhao,Guanhua Zhang,Hui Liu,Kyeongjae Cho,Rui Wu,Jiaou Wang,Sen Zhang,Robert M. Wallace,Hong Dong
DOI: https://doi.org/10.1016/j.apsusc.2018.03.009
IF: 6.7
2018-01-01
Applied Surface Science
Abstract:A systematic study of the interfacial chemistry for the HCl pretreated and native oxide InAs(100) samples upon atomic layer deposition (ALD) of Al2O3, and the post deposition annealing (PDA) process has been carried out, using in situ synchrotron radiation photoelectron spectroscopy. The "clean up" effect for the native oxide sample is detected, but it is not observed for the HCl pretreated sample. The out-diffusion and desorption of both In and As oxides have been characterized during the ALD process and the following PDA process. The surface morphology evolution during the PDA process is studied by in situ photo-emission electron microscopy. The bubbles emerged after PDA at 360 degrees C and grew up at 370 degrees C. After PDA at 400 degrees C and at higher temperatures, pits are seen in some areas, and the tear up of the Al2O3 film is seen in other areas with the formation of indium droplets. This study gives insight in the mechanism of elemental diffusion/desorption, which may associate the reliability of III-V semiconductor based devices. (C) 2018 Elsevier B.V. All rights reserved.