Effects of Zn-doping on Structure and Electrical Properties of P-Type Conductive CuCr1−xZnxO2 Delafossite Oxide
Ya-Hui Chuai,Xin Wang,Hong-Zhi Shen,Ya-Dan Li,Chuan-Tao Zheng,Yi-Ding Wang
DOI: https://doi.org/10.1007/s10853-015-9679-4
IF: 4.5
2015-01-01
Journal of Materials Science
Abstract:Delafossite-type CuCr1−x Zn x O2 (x = 0, 0.03, 0.05, 0.07, 0.1) conductive oxides were synthesized by sol–gel method, and the effects of Zn-doping on morphology, structure, and electrical properties of the CuCr1−x Zn x O2 oxides were investigated. Based on X-ray diffraction (XRD) and Raman spectrum, the crystalline quality of the oxides is improved by the suitable substitution of Cr by Zn. The X-ray photoelectron spectroscopy (XPS) spectra reveal the chemical state of Zn is +2. The Hall and Seebeck coefficients of the pellet samples display a positive sign, indicating p-type conductive characteristics of the obtained oxides. The temperature-dependent resistivity of the oxides is proven to be consistent with small polaron hopping. For the three oxide samples with x = 0, 0.05, and 0.1, the activation energies for the polaron hopping between Zn2+ and Cr3+ sites are 54, 41.5, 32 meV, respectively, which is found to decrease with the increase of Zn content. The electrical conductivity can be remarkably improved by Zn-doping due to the small polaron hopping activation energy. These properties render this material promising as transparent electrode in optoelectronic industry.