Synthetic Antiferromagnet With Heusler Alloy Co2feal Ferromagnetic Layers

X. G. Xu,D. L. Zhang,X. Q. Li,J. Bao,Y. Jiang
DOI: https://doi.org/10.1063/1.3271352
IF: 2.877
2009-01-01
Journal of Applied Physics
Abstract:Heusler alloy Co2FeAl was employed as ferromagnetic layers in Co2FeAl (3 nm)/Ru (x nm)/Co2FeAl (5 nm) synthetic antiferromagnet structures. The experimental results show that the structure with a Ru thickness of 0.45 nm is strongly antiferromagnetic coupled, which is maintained after annealing at 150 degrees C for 1 h. The structure has a very low saturation magnetization M-s of 425 emu/cm(3), a low switching field H-sw of 4.3 Oe, and a high saturation field H-s of 5257 Oe at room temperature, which are favorable for application in ultrahigh density magnetic read heads or other magnetic memory devices. Crystal structure study testifies that the as-deposited Co2FeAl film is in the B2 phase. Therefore, Heusler alloys can be used to fabricate synthetic antiferromagnetic and it is possible to make "all-Heusler" spin valves or magnetic tunneling junctions with better magnetic switching properties and high magnetoresistance.
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