Abstract:The formation of titanium silicides has been studied using simultaneous in situ x-ray diffraction with millisecond time resolution and sheet resistance measurements. The effect of a Mo interposed layer between Ti films and Si substrate was investigated by varying the thickness of the Mo interlayer from 0 (Ti/Si) to 1.8 nm (Ti/Mo/Si). The thickness of Ti was kept to 55 nm for all samples. Both isothermal annealing and ramp annealing in helium were performed in order to study the mechanism of silicide formation. While C49 TiSi2 was the only disilicide found after annealing Ti/Si at 650 °C for 20 min, C54 TiSi2 was readily formed in the presence of Mo. The formation of C49 TiSi2 was not observed with a 1.8 nm thick Mo interlayer. Instead, there was indication that C40 (Mo,Ti)Si2 was formed. In addition, broad diffraction peaks, weak in intensity, could be all assigned to Ti5Si4. However, the presence of Ti5Si4 alone did not induce the formation of C54 TiSi2. Even with a 20 °C increase in isothermal annealing temperature to 670 °C for 20 min, the presence of Mo was found to be a necessity for the formation of C54 TiSi2. When annealed in nitrogen, instead of helium, the formation of surface titanium nitride competes with the formation of silicides. The formation of C54 TiSi2 was even suppressed in the sample with a 1.8 nm Mo interlayer when annealed at 650 °C in nitrogen. The formation of Ti5Si4 and the role it plays in the formation of other silicides (C40, C49, and C54) are discussed on the basis of simple crystallographic considerations. The effect of a Mo interlayer and/or ramp-rate on the formation of C40 (Mo,Ti)Si2 and C49 TiSi2 is discussed in conjunction with variations of the preferential orientation of C54 TiSi2 films.

Low resistivity C54 phase TiSi2 films synthesized by a novel two-step method

Advances in the Formation of C54-FiSi2 with an Interposed Refractory Metal Layer Some Properties

Compositional dependence of epitaxial Tin+1SiCn MAX-phase thin films grown from a Ti3SiC2 compound target

Atmospheric Pressure Chemical Vapor Deposition of TiSi2 Films on Glass

TiO2 films prepared by DC reactive magnetron sputtering at room temperature: Phase control and photocatalytic properties

Effects of intermediate phase C40 TiSi2 on the formation temperature of C54 TiSi2 with a Ta interlayer

In Situ Characterization of Titanium Silicide Formation: the Effect of Mo Interlayer, Temperature Ramp-Rate, and Annealing Atmosphere

C54-TiSi 2 FORMATION USING NANOSECOND LASER ANNEALING OF A-Si/Ti/A-Si STACKS

Low Contact Resistivity of Ti/TiN/Al for NiSi2 on Epitaxial Si:P Structure at Full Low-Temperature Process below 450 °C

Effects of substrate bias and temperature during Titanium sputter-deposition on the phase formation in TiSi2

Nucleation and Growth of Tisi2 Thin Films Deposited on Glass by Atmospheric Pressure Chemical Vapor Deposition

Enhanced Formation of the C54 Phase of Tisi2 by an Interposed Layer of Molybdenum

Alternative Pathway for the Formation of C54tisi(2)

TISI2 Formation and Mechanism Through Ultra-Thin Al2O3 Intermediation

CoSi2 Formation Using Ti-capping Layer

Different Routes to the Formation of C54tisi(2) in the Presence of Surface and Interface Molybdenum: A Transmission Electron Microscopy Study

Surface-Morphology Study of Titanium Silicide Formed on Polycrystalline Silicon

EFFECT OF CRYSTALLINE PHASE FORMATION ON OPTICAL PROPERTIES OF TiSi2 THIN FILMS

Interface diffusion and reaction between Ti layer and Si3N4/Si substrate

Interdiffusion and Phase Formation During Thermal Annealing of Ti/Mo Bilayers on Si Substrates

Process optimization of titanium self-aligned silicide formation through evaluation of sheet resistance by design of experiment methodology