High Temperature Characteristics Of A 2 M Ingasb/Algaassb Passively Mode-Locked Quantum Well Laser
Xiang Li,Hong Wang,Zhongliang Qiao,Xin Guo,Wanjun Wang,Brian Jia Xu Sia,Geok Ing Ng,Yu Zhang,Zhichuan Niu,Cunzhu Tong,Chongyang Liu
DOI: https://doi.org/10.1063/1.5096447
IF: 4
2019-01-01
Applied Physics Letters
Abstract:A monolithic two-section InGaSb/AlGaAsSb single quantum well mode-locked laser (MLL) emitting at 2m is demonstrated. The laser is able to lase in the continuous wave mode up to 80 degrees C, and passive mode locking operation with a fundamental repetition frequency of approximate to 18.4GHz is observed up to 60 degrees C. The laser has a characteristic temperature T-0 of approximate to 88K near room temperature, which is only slightly affected by the absorber bias voltage (V-a). One consequence of this finding is verified by the temperature-independent power ratios before lasing. The variations of the repetition frequency with gain current (I-g) and temperature (T) have also been systematically investigated. In the bias range in this work, the repetition frequency increases as a whole by more than 30MHz when the temperature is raised from 20 to 40 degrees C. Frequency tuning of approximate to 130 and approximate to 60MHz was observed at 20 and 40 degrees C, respectively. The results and their mechanism analysis provide guidelines for GaSb-based MLLs to better meet the application-required repetition frequencies even with the presence of an unwanted increase in temperature.