Abstract:The electron diffusion and recombination limited by interfacial potential in dye-sensitized solar cells are theoretically investigated within a potential barrier model. The dependence of diffusion coefficient D and recombination rate K on various parameters is examined. The D and K exhibit electron density dependence with three distinct regions: (i) constant region, (ii) linear region, and (iii) nonlinear region when the quasi-Fermi energy level sweeps from the lower-energy side to the conduction band edge. For a dye-sensitized solar cell operated at normal conditions, a linear-density-dependent expression for D or K is a reasonable approximation. The diffusion coefficient D in a temperature range of 200-400 K exhibits thermally excited behavior as D similar to exp(-E-act/k(B)T) when the potential barrier width W is large enough (similar to 4 nm) and the corresponding activation energy E-act is independent of quasi-Fermi energy level or electron density. The diffusion coefficient D shows linear dependence on particle size. The recombination rate K shows more complicated size dependence due to the competition between the pure size effect and the local electric field effect. When the quasi-Fermi energy level approaches the conduction band edge, the K increases significantly with size due to the shrinkage of the potential barrier on the interface. Because of the local electric field generated by excess electrons accumulated in nanoparticles, the recombination rate K is approximately proportional to 1/epsilon(r) (epsilon(r) is relative dielectric constant of interface layer). This implies a way to suppress recombination by controlling the dielectric property of the interface layer. The interfacial-potential-limited diffusion and recombination are beneficial supplements to the well-established mechanisms, such as localized-state-limited diffusion (trapping and detrapping effect), chemical-reaction-limited recombination, etc., and is helpful for us to understand the operating mechanism in dye-sensitized solar cells.

Determination of Effective Diffusion Length and Saturation Current Density in Silicon Solar Cells

Carrier Transport Simulation Methods for Electronic Devices with Coexistence of Quantum Transport and Diffusive Transport

Detailed investigation of TLM contact resistance measurements on crystalline silicon solar cells

Realization of a General Method for Extracting Specific Contact Resistance of Silicon‐based Dopant‐free Heterojunctions

Experimental Demonstration of Optically Determined Solar Cell Current Transport Efficiency Map

Interpretation Of The Commonly Observed I-V Characteristics Of C-Si Cells Having Ideality Factor Larger Than Two

Unveiling the mechanism of attaining high fill factor in silicon solar cells

Steady-state distributions of carrier concentration and recombination rates in a solar cell under operating conditions

A contactless method of emitter sheet resistance measurement for silicon wafers

Current transport efficiency analysis of multijunction solar cells by luminescence imaging

Theoretical limiting‐efficiency assessment on advanced crystalline silicon solar cells with Auger ideality factor and wafer thickness modifications

Numerical analysis of the non-ideal current-voltage characteristics of solar cell

Recombination Parameters of the Diffusion Region and Depletion Region for Crystalline Silicon Solar Cells under Different Injection Levels

An In-Depth Analysis of the Silicon Solar Cell Key Parameters’ Optimal Magnitudes Using PC1D Simulations

Theoretical Investigation on Interfacial-Potential-Limited Diffusion and Recombination in Dye-Sensitized Solar Cells

Transport Efficiency Imaging in Multi-Junction Solar Cells by Luminescence Analysis

Macroscopic Study on Current Transport Path in Front‐Side Contacts of Crystalline Silicon Solar Cells

Resistivity analysis on the enhancement of silicon heterojunction solar cells in light-thermal treatment

Determination of Current Transport Efficiency Map by Optoelectronic Reciprocity Relation in CdTe Solar Cells

Spatially Resolved Identification of Shunt Defects in Thin Film Solar Cells via Current Transport Efficiency Imaging Combined with 3D Finite Element Modeling

Simulation of a high-efficiency silicon-based heterojunction solar cell