Dynamical Diffraction Calculations for RHEED and REM

LM PENG,JM COWLEY

DOI: https://doi.org/10.1107/s0108767386098756

1986-01-01

Abstract:Several crystals of a specimen of OsSi2, prepared by arc meltine and mounted in a tilt/rotate stage, on a Be grid, were exarni~ed in a Philips EM 430 (with EDS) , using a 20 nm probe.?

What problem does this paper attempt to address?

A Multislice Approach To The Rheed And Rem Calculation

L.-M. Peng,J.M. Cowley

DOI: https://doi.org/10.1016/0039-6028(88)90925-9

IF: 1.9

1988-01-01

Surface Science

Abstract:A computing method for the forward dynamical scattering calculations which has been successfully applied to the Bragg case of high energy electron diffraction is described. This method is based on the physical optics theory of dynamical diffraction of Cowley and Moodie and is used for calculations of reflection high energy electron diffraction (RHEED) diffraction amplitudes and the reflection electron microscopy (REM) image intensities for the extended surface of a perfect crystal and also for a crystal surface with a defect. The physical basis of the method and some practical computing considerations are described.
A Study of Rheed Pattern from the Epitaxial Growth of Si-Ge Crystal

Zhang Chong,Ye Hui,Zhang Lei,Huang-Fu You-Rui,Liu Xu

DOI: https://doi.org/10.7498/aps.58.7765

IF: 0.906

2009-01-01

Acta Physica Sinica

Abstract:The patterns of Reflection high energy electron diffraction (RHEED) from the epitaxial growth of Si-Ge crystal are interpreted basing on the kinetical diffraction theory of crystal. The transmission pattern is studied and interpreted, which relates to the rough surface after crystal growth. The RHEED patterns of polycrystalline rings and twin crystal and their evolvements are analyzed with respec to the epitaxial growth conditions.
A Multislice Approach to the Rheed and Rem Simulation

Lian‐Mao Peng,J COWLEY

DOI: https://doi.org/10.1017/s0424820100143511

1986-01-01

Abstract:The multislice method of calculating dynamical diffraction is based on the physical optics theory of Cowley and Moodie, which has been shown is equivalent to the quantum theory, back scattering being neglected. This method is capable of the calculation of RHEED diffraction amplitudes and the REM image simulation provided that the surface structure and surface potential have been properly modeled. The procedure for RHEED and REM calculations used her,e is basically the same as the conventional multislice calculation. The periodic continuation assumption has been employed to include the desired model surface (Fig. 1). A large dimension normal to the surface must be used so that there is no interference between these extended unit cells. The choice of the specimen thickness depends on the competition between the requirements for short computing time and larger model surface required to simulate the real equilibrium diffraction processes.
Dynamical RHEED Calculations from the Surface of a Semi-Infinite Crystal

LM Peng,SL Dudarev,MJ Whelan

DOI: https://doi.org/10.1107/s010876739600116x

1996-01-01

Acta Crystallographica Section A Foundations of Crystallography

Abstract:A slab method for dynamical RHEED calculations from the surface of a semi-infinite crystal is developed. This method is based on an old idea of McRae [Surf. Sci. (1968), 11, 479-491], who proposed that in LEED Bloch waves characterizing the bulk crystal may be obtained by diagonalizing the scattering matrix associated with a repeating bulk crystal slab. However, a direct implementation of this idea for dynamical RHEED calculation may result in divergent results. It is shown that this problem may be overcome by the method of Bethe potentials and the results obtained using the method of combined McRae and Bethe potentials are in good agreement with exact dynamical RHEED calculations.
Illumination of Crystal-Surfaces in the Electron-Microscope under Rheed and Rem Geometry

LM PENG

DOI: https://doi.org/10.1016/0304-3991(90)90034-j

IF: 2.994

1990-01-01

Ultramicroscopy

Abstract:The illumination of crystal surfaces in the transmission electron microscope under reflection geometry has been investigated. Distributions of both the incident glancing angle and beam azimuth on a perfect crystal surface have been obtained, and their influence on REM imaging of surfaces is discussed with reference to experimental REM images of GaAs and Pt single crystals.
Geometric Analysis of Surface Resonance Conditions in Reflection High Energy Electron Diffraction

LM PENG,JM COWLEY

DOI: https://doi.org/10.1002/jemt.1060060107

1987-01-01

Journal of Electron Microscopy Technique

Abstract:AbstractA three‐dimensional analysis in reciprocal space is used to analyse reflection high energy electron diffraction (RHEED) patterns. Particular emphasis is placed on investigating the surface resonance phenomenon, the resonance conditions, and the diffraction mechanisms. The surface resonance regions defined by the resonance beam threshold conditions are related to the limits for the specular reflection spot in the diffraction pattern. The introduction of an Ewald sphere of varying radius is shown to be useful in understanding the surface phenomenon. Simulations based on the geometric theory, taking account of the surface refraction effect, describe very well the RHEED pattern geometry from the (111) surface of a platinum single crystal.
A General Matrix Representation of the Dynamical Theory of Electron Diffraction II. Application to RHEED from Relaxed and Reconstructed Surfaces

L.-M. Peng,M. J. Whelan

DOI: https://doi.org/10.1098/rspa.1990.0122

1990-01-01

Abstract:The general matrix formulation developed in a previous paper for calculating dynamical electron diffraction from an assembly of crystal slabs and reflection from surfaces of semi-infinite bulk crystals is used to investigate the effects of surface layers scattering on RHEED reflected beam amplitudes. The general computing procedure is illustrated by reference to a symmetric two-beam and a general four-beam Bragg case. Applications are made to crystal systems containing relaxed or reconstructed surface layers.
Dynamical Calculations for RHEED from MBE Growing Surfaces. I. Growth on a Low-Index Surface

L.-M. Peng,M. J. Whelan

DOI: https://doi.org/10.1098/rspa.1991.0013

1991-01-01

Abstract:Dynamical diffraction calculations have been made for reflection high-energy electron diffraction (RHEED) from molecular beam epitaxy (MBE) growing surfaces. Effects due to both the diffraction and growth conditions on the RHEED intensity oscillations during MBE growth have been investigated in detail for perfect layer growth, non-diffusive, diffusive growth, and distributed growth on a low-index surface. The results are compared with the kinematic diffraction theory, and are shown to be able to reproduce almost all features of measured RHEED intensity oscillations from low-index surfaces.
Dynamical Calculations of RHEED Intensity Evolution During MBE Growth

L. -M. Peng,M. J. Whelan

DOI: https://doi.org/10.1017/s0424820100135605

1991-01-01

Abstract:Reflection high energy electron diffraction (RHEED) has become well established as one of the most powerful and versatile techniques for growth and surface studies of semiconductor films prepared by molecular beam epitaxy (MBE). In particular the technique of RHEED intensity oscillations has been used routinely to calibrate beam fluxes and alloys composition and to control the thicknesses of quantum wells and superlattice layers.Although several interpretations have been proposed for the strong oscillations in RHEED intensity during MBE growth, full dynamical calculations have been done only for an artificial surface consisting of a periodic array of surface steps. The enormous amount of computation involved prevents the dynamical theory being applied to a more realistic epitaxically growing system. In this paper we report a simple and practical method for calculating dynamical RHEED from MBE growing surfaces.We first consider epitaxial growth on a low-index surface. The growth is simulated by using a perfect layer growth model and a diffusive growth model.
Dynamic Calculations for Rheed from Mbe Growing Surfaces .2. Growth Interruption and Surface Recovery

LM PENG,MJ WHELAN

DOI: https://doi.org/10.1098/rspa.1991.0143

1991-01-01

Abstract:Detailed dynamical calculations for reflection high-energy electron diffraction (RHEED) from surfaces growing by molecular beam epitaxy have been made to investigate the technique of growth interruption and surface recovery kinetics. A birth-death growth model and a systematic reflection approximation to RHEED have been used. It is found that whilst the RHEED intensity oscillation behaviour is very sensitive to the incident glancing angle, the shape of the intensity recovery curve is insensitive to the diffraction condition. It is further shown that the RHEED intensity recovery curves bear a resemblance to the corresponding surface-roughness recovery curves. Sensible quantitative studies of recovery can therefore be made by analysing the RHEED intensity recovery curves. A similarity between the surface recovery and RHEED intensity recovery has been established.
Surface Superlattice Reflections and Kinematical Approximation in RHEED

LM PENG,MJ WHELAN

DOI: https://doi.org/10.1107/s0108767390010108

1991-01-01

Acta Crystallographica Section A Foundations of Crystallography

Abstract:The physical nature of the sharpness and weakness of surface superlattice spots in reflection high-energy electron diffraction (RHEED) and the validity of the kinematical approximation for analyzing the intensities of the superlattice spots are examined, using a Bloch-wave formulation of the dynamical theory of RHEED. It is found that although it is adequate to treat surface superlattice diffraction kinematically within the selvedge, a kinematical analysis of RHEED intensities of superlattice spots is not in general valid, unless some criteria are satisfied. These include a projection approximation for the superlattice in the selvedge, a glancing incidence such that no diffracted beams other than the incident and specularly reflected beams are excited in both the selvedge and the underlying bulk crystal.
Dynamical Effects of Thermal Diffuse Scattering in RHEED

SL DUDAREV,LM PENG,MI RYAZANOV

DOI: https://doi.org/10.1107/s0108767390011680

1991-01-01

Abstract:A general form for the intensity distribution of thermal diffuse scattering (TDS) is derived within the framework of quantum mechanics. The formulation takes into account the dynamical diffraction effects for both the initial and the final states of high-energy electrons and uses a single incoherent scattering approximation. When applied to estimate the intensity distribution of TDS in reflection high-energy electron diffraction (RHEED), using a two-wave approximation for the elastically scattered wave field, an analytical expression is obtained. It is shown that the dynamical diffraction effects may lead to an enhancement in the TDS intensities near the diffraction spots. The influence of correlated thermal atomic displacements on the contrast of the Kikuchi line parallel to the surface shadow edge has been discussed.
Dynamical Electron Diffraction Simulation for Non-Orthogonal Crystal System by a Revised Real Space Method

Chenglong Lv,Q.B. LIU,Changqun Cai,Jianyu Huang,Guangmin Zhou,Y.G. WANG

DOI: https://doi.org/10.1111/jmi.12320

IF: 1.9522

2016-01-01

Journal of Microscopy

Abstract:In the transmission electron microscopy, a revised real space (RRS) method has been confirmed to be a more accurate dynamical electron diffraction simulation method for low-energy electron diffraction than the conventional multislice method (CMS). However, the RRS method can be only used to calculate the dynamical electron diffraction of orthogonal crystal system. In this work, the expression of the RRS method for non-orthogonal crystal system is derived. By taking Na2 Ti3 O7 and Si as examples, the correctness of the derived RRS formula for non-orthogonal crystal system is confirmed by testing the coincidence of numerical results of both sides of Schrödinger equation; moreover, the difference between the RRS method and the CMS for non-orthogonal crystal system is compared at the accelerating voltage range from 40 to 10 kV. Our results show that the CMS method is almost the same as the RRS method for the accelerating voltage above 40 kV. However, when the accelerating voltage is further lowered to 20 kV or below, the CMS method introduces significant errors, not only for the higher-order Laue zone diffractions, but also for zero-order Laue zone. These indicate that the RRS method for non-orthogonal crystal system is necessary to be used for more accurate dynamical simulation when the accelerating voltage is low. Furthermore, the reason for the increase of differences between those diffraction patterns calculated by the RRS method and the CMS method with the decrease of the accelerating voltage is discussed.
Thermal diffuse scattering and REM image-contrast preservation

L.-M. Peng,J.M. Cowley

DOI: https://doi.org/10.1016/0304-3991(89)90243-X

IF: 2.994

1989-01-01

Ultramicroscopy

Abstract:The diffuse diffraction spots occurring in reflection high energy electron diffraction (RHEED) patterns and not lying on the circle in which the Ewald sphere intercepts a reciprocal plane have been selected for reflection electron microscopy (REM) imaging of Pt(111) surfaces. Application of the boundary conditions for reflection electron diffraction to the inelastic diffusely scattered electrons requires that the thermal diffuse scattering process gives these diffuse diffraction spots in RHEED patterns, and there is no contribution from elastically scattered electrons to the image contrast. Contrast resulting from surface steps has been observed to be well preserved around the near-focus region in the REM images. It has also been observed that the contrast is smeared out rapidly in the off-focus region due to the diffuseness of the thermal diffuse spot used for REM imaging.
Realistic simulation of reflection high-energy electron diffraction patterns for two-dimensional lattices using Ewald construction

Chong Liu,Kai Chang,Ke Zou

DOI: https://doi.org/10.1116/6.0001899

2022-08-24

Abstract:Reflection high-energy electron diffraction (RHEED) is a powerful tool for characterizing crystal surface structures. However, the setup geometry leads to distorted and complicated patterns, which are not straightforward to link to the real-space structures. A program with a graphical user interface is provided here to simulate the RHEED patterns. Following the Ewald construction in the kinematic theory, we find out the exact geometric transformation in this model that determines the positions of diffraction spots. The program can deal with many forms of surface structures, including surface reconstructions or domains. The simulations exhibit great agreement with the experimental results in various cases. This program will benefit the structure analysis in thin film growth and surface science studies.

Materials Science,Computational Physics
Surface structural sensitivity of convergent-beam RHEED: Si (001) 2×1 models compared with dynamical simulations

J.M. Zuo,U. Weierstall,L.M. Peng,J.C.H. Spence

DOI: https://doi.org/10.1016/S0304-3991(99)00183-7

IF: 2.994

2000-01-01

Ultramicroscopy

Abstract:The aim of this work is to evaluate the sensitivity of convergent-beam RHEED for the refinement of surface atomic structure. We have compared experimental and theoretical convergent-beam RHEED patterns from the silicon (0 0 1) reconstructed surface. The experiment was carried out in a custom designed UHV diffraction camera,using a micron sized probe. Both experimental and theoretical CB-RHEED patterns show complex details, highly sensitive to the surface structure. The multiple scattering simulations were based on two experimental structural models which make different assumptions for dimer tilt, one derived from X-ray diffraction results, and another from LEED data. The simulated CB-RHEED patterns using the X-ray model were found to be in closer agreement with our experiment than the LEED model. However, the agreement is not entirely satisfactory, suggesting that further improvement on this model is necessary. (C) 2000 Elsevier Science B.V. All rights reserved.
Three-dimensional rotation electron diffraction: software RED for automated data collection and data processing.

Wei Wan,Junliang Sun,Jie Su,Sven Hovmöller,Xiaodong Zou

DOI: https://doi.org/10.1107/S0021889813027714

IF: 4.868

2013-01-01

Journal of Applied Crystallography

Abstract:Implementation of a computer program package for automated collection and processing of rotation electron diffraction (RED) data is described. The software package contains two computer programs: RED data collection and RED data processing. The RED data collection program controls the transmission electron microscope and the camera. Electron beam tilts at a fine step (0.05-0.20°) are combined with goniometer tilts at a coarse step (2.0-3.0°) around a common tilt axis, which allows a fine relative tilt to be achieved between the electron beam and the crystal in a large tilt range. An electron diffraction (ED) frame is collected at each combination of beam tilt and goniometer tilt. The RED data processing program processes three-dimensional ED data generated by the RED data collection program or by other approaches. It includes shift correction of the ED frames, peak hunting for diffraction spots in individual ED frames and identification of these diffraction spots as reflections in three dimensions. Unit-cell parameters are determined from the positions of reflections in three-dimensional reciprocal space. All reflections are indexed, and finally a list with hkl indices and intensities is output. The data processing program also includes a visualizer to view and analyse three-dimensional reciprocal lattices reconstructed from the ED frames. Details of the implementation are described. Data collection and data processing with the software RED are demonstrated using a calcined zeolite sample, silicalite-1. The structure of the calcined silicalite-1, with 72 unique atoms, could be solved from the RED data by routine direct methods.
A Treatment of RHEED from a Rough Surface of a Crystal by an Optical Potential Method

SL DUDAREV,LM PENG,MJ WHELAN

DOI: https://doi.org/10.1016/0039-6028(92)90564-m

1992-01-01

Surface Science Letters

Abstract:The general formalism of the optical potential method has been applied to the problem Of reflection high energy electron diffraction (RHEED) from the rough surface of a crystal. For the case where short-range disorder dominates an explicit analytical expression for the effective absorption potential has been obtained, and procedures for evaluating this potential have been developed which utilize the conventional approaches and computer routines developed earlier for transmission high energy electron diffraction (THEED). This potential has been combined with dynamical RHEED calculations for a molecular beam epitaxy (MBE) growing surface. It is found that under certain circumstances the optical potential due to the roughness of the MBE growing surface has an appreciable effect on the shape of the corresponding RHEED rocking curve.
Dynamic Calculations for Rheed from Mbe Growing Surfaces .3. Heteroepitaxial Growth and Interface Formation

LM PENG,MJ WHELAN

DOI: https://doi.org/10.1098/rspa.1991.0144

1991-01-01

Abstract:The birth-death growth model previously used in parts I and II for simulating molecular beam epitaxy growth of a single type of atom species has been generalized to describe the growth of heterostructures involving the deposition and diffusion of multiple atomic species. Detailed dynamical reflection high-energy electron diffraction (RHEED) calculations have been made to investigate various aspects of RHEED intensity oscillations, including the measurement of growth rate and alloy composition, interface and recovery effects, control of quantum well widths, as well as changes of the character of RHEED intensity oscillations.
Electron Scattering Factors of Ions and Dynamical Rheed from Surfaces of Ionic Crystals

LM Peng,SL Dudarev,MJ Whelan

DOI: https://doi.org/10.1103/physrevb.57.7259

IF: 3.7

1998-01-01

Physical Review B

Abstract:Electron scattering factors of ions are represented in a parametrized form which separates the diverging Coulomb term due to ionic charge from the contribution of the screened atomic field. Using this representation it is shown how dynamical reflection high-energy electron diffraction (RHEED) calculations can be performed for ionic surfaces using conventional numerical techniques. Following the classification of ionic surfaces proposed by Tasker [Surf. Sci. 78, 315 (1979)], we analyze the effect of ionicity on RHEED intensities for three classes of ionic surfaces. In the first case both positive and negative ions are located in the same plane and this leads to the cancellation of long-range Coulomb contribution to the crystal potential. The second class of ionic surfaces consists of layers of ions having net nonzero charge. Ionic layers may be grouped into repeat units of planes of the form (anion)-(cation)-(anion) characteristic of the (111) surface of the fluorite structure so that each repeat unit satisfies the charge neutrality condition and also has zero net dipole moment perpendicular to the surface. For this class of surfaces the Coulomb term leads to unusual features in the distribution of the potential in the crystal. The third type of the termination of an ionic crystal lattice gives rise to a sequence of repeat units characterized by a nonzero net dipole moment resulting in a divergent behavior of the potential. Our calculations show that charge transfer between lattice sites occurring in an ionic crystal affects very substantially the form of RHEED rocking curves. The effect can be interpreted in terms of the change in the effective inner potential. This in turn can be used for quantitative determination of the degree of charge transfer occurring in the surface layer of an ionic crystal.

Dynamical Diffraction Calculations for RHEED and REM

A Multislice Approach To The Rheed And Rem Calculation

A Study of Rheed Pattern from the Epitaxial Growth of Si-Ge Crystal

A Multislice Approach to the Rheed and Rem Simulation

Dynamical RHEED Calculations from the Surface of a Semi-Infinite Crystal

Illumination of Crystal-Surfaces in the Electron-Microscope under Rheed and Rem Geometry

Geometric Analysis of Surface Resonance Conditions in Reflection High Energy Electron Diffraction

A General Matrix Representation of the Dynamical Theory of Electron Diffraction II. Application to RHEED from Relaxed and Reconstructed Surfaces

Dynamical Calculations for RHEED from MBE Growing Surfaces. I. Growth on a Low-Index Surface

Dynamical Calculations of RHEED Intensity Evolution During MBE Growth

Dynamic Calculations for Rheed from Mbe Growing Surfaces .2. Growth Interruption and Surface Recovery

Surface Superlattice Reflections and Kinematical Approximation in RHEED

Dynamical Effects of Thermal Diffuse Scattering in RHEED

Dynamical Electron Diffraction Simulation for Non-Orthogonal Crystal System by a Revised Real Space Method

Thermal diffuse scattering and REM image-contrast preservation

Realistic simulation of reflection high-energy electron diffraction patterns for two-dimensional lattices using Ewald construction

Surface structural sensitivity of convergent-beam RHEED: Si (001) 2×1 models compared with dynamical simulations

Three-dimensional rotation electron diffraction: software RED for automated data collection and data processing.

A Treatment of RHEED from a Rough Surface of a Crystal by an Optical Potential Method

Dynamic Calculations for Rheed from Mbe Growing Surfaces .3. Heteroepitaxial Growth and Interface Formation

Electron Scattering Factors of Ions and Dynamical Rheed from Surfaces of Ionic Crystals