Abstract:The energies in six combinations of(001)Au/(111)Si、(011)Au/(111)Si、(111)Au/(111)Si and(001)Au/(001)Si、(011)Au/(001)Si、(111)Au/(001)Si twist boundaries have been calculated with modified embedded atom method(MEAM).The results show that the interface energies corresponding to(111)Au/Si、(001)Au/Si、(011)Au/Si increase successively regardless of(111)-or(001)-oriented single crystal Si substrate.Considering minimization of interface energy,the Au films deposited on(111)-or(001)-oriented Si substrate will result in a(111) preferable orientation,especially at twist angle θ=2.68° for the former and θ=2.42° for latter.

Anisotropy Analysis of Energy in Ag/Si Twist Interface