Preparation and Colossal Magnetoresistance in a Trilayer La0.67Sr0.33MnO3/La0.75MnO3/La0.67Sr0.33MnO3 Device by Dc Magnetron Sputtering

HQ Li,QF Fang,ZG Zhu
DOI: https://doi.org/10.1016/s0025-5408(02)00717-1
IF: 5.6
2002-01-01
Materials Research Bulletin
Abstract:Epitaxial trilayer films of La0.67Sr0.33MnO3 (LSMO)/La0.75MnO3 (L0.75MO)/La0.67Sr0.33MnO3 (LSMO) have been prepared on (001) oriented LaAlO3 substrates by dc magnetron sputtering. The structure and MR are studied. All as-deposited trilayer films exhibit a semiconductor to metal transition at temperature ranging from 116 to 185K. The MR is also shown to be dependent on the thickness of the middle oxide layer. A maximum MR value of 32% (ΔR/R0) has been obtained at 132K under 0.4T magnetic field for a LSMO (300nm)/L0.75MO (70nm)/LSMO (300nm) trilayer film. The MR of trilayer film prefers to that of both LSMO and L0.75MO single layer films.
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