Properties of Highly Oriented Rare-Earth-Ion-Substituted BaNb2O6Thin Films Synthesized by Chemical Solution Deposition
W Sakamoto,M Mizuno,T Yamaguchi,K Kikuta,S Hirano
DOI: https://doi.org/10.1143/jjap.42.5913
IF: 1.5
2003-01-01
Japanese Journal of Applied Physics
Abstract:Highly oriented (Ba,Ln)Nb2O6 [Ln: Gd, Ho, Er] thin films have been synthesized by a chemical solution deposition (CSD) method. Homogeneous and stable (Ba,Ln)Nb2O6 Precursor solutions were prepared by controlling the reaction of metalorganic compounds in solution. Gd-, Ho- and Er-substituted BaNb2O6 powders and thin films, such as Ba0.75Gd0.167Nb2O6 (BGN75), Ba0.66Gd0.22Nb2O6 (BGN66), Ba0.66Ho0.22Nb2O6 (BHN66) and Ba0.66Er0.22Nb2O6 (BEN66), crystallized in the tetragonal tungsten bronze phase below 800degreesC. The synthesized BGN75, BGN66, BHN66 and BEN66 thin films on Pt(100)/MgO(100) had a prominent 00l preferred orientation and exhibited the diffuse phase transition of dielectric constant-temperature (epsilon-T) curves. The Curie temperatures of the (Ba,Ln)Nb2O6 films depended upon the ionic radii of the substituted rare earth ions. The BHN66 and BEN66 thin films on Pt(100)/MgO(100) showed typical ferroelectric hysteresis loops at room temperature.