Pressure-induced phase transitions in the Zr<i>XY</i> (<i>X</i> = Si, Ge, Sn; <i>Y</i> = S, Se, Te) family compounds
Qun Chen,Juefei Wu,Tong Chen,Xiaomeng Wang,Chi Ding,Tianheng Huang,Qing Lu,Jian Sun
DOI: https://doi.org/10.1088/1674-1056/ac5989
2022-01-01
Chinese Physics B
Abstract:Pressure is an effective and clean way to modify the electronic structures of materials, cause structural phase transitions and even induce the emergence of superconductivity. Here, we predicted several new phases of the ZrXY family at high pressures using the crystal structures search method together with first-principle calculations. In particular, the ZrGeS compound undergoes an isosymmetric phase transition from P4/nmm-I to P4/nmm-II at approximately 82 GPa. Electronic band structures show that all the high-pressure phases are metallic. Among these new structures, P4/nmm-II ZrGeS and P4/mmm ZrGeSe can be quenched to ambient pressure with superconducting critical temperatures of approximately 8.1 K and 8.0 K, respectively. Our study provides a way to tune the structure, electronic properties, and superconducting behavior of topological materials through pressure.