Investigation of a single semiconductor quantum dot's absorption and gain properties

Shun-cai ZHAO,Zheng-dong LIU,Qing-hong LIAO
DOI: https://doi.org/10.3969/j.issn.1007-5461.2008.03.005
2008-01-01
Abstract:The density matrix approach was employed to investigate analytically the absorption/gain be- havior in a semiconductor quantum dot under the strong confinement regime.The numerical results show the distribution symmetry of the gain trough and absorption crest remains the same at some different time, and the phenomena of mirror reflection occurs.However,during the evolution duration the long time ab- sorption/gain behavior of the quantum dot system oscillates furiously and a typical interesting quantum optical phenomena of collapse-revival emergences.
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