Abstract:CuO nanowires are known to have excellent electrochemical properties and can be produced by various methods. Among them a method which directly heat either the Si wafer with Cu layer or pure copper plate so called the thermal oxidation method has lately been drawing attention. However, during its production, interfacial delamination between the Cu layer and the wafer has always been an issue. In this study, the mechanism of interfacial delamination was experimentally elucidated by comparing a Si wafer with Cu layer deposited by electron beam evaporation with a pure copper plate. As a result, it was found that the deposited Cu layer decreased with increasing heating time of the Si wafer production. Moreover, the disappearance of the Cu layer and Cu2O layer on the Si wafer was found in the specimens with a heating time of 6 hours. It was suggested that this disappearance would form an opening between the CuO layer and the Si wafer leading to the delaminating of the interface between the oxide film and the wafer. The disappearance also suggested that the length and density of the CuO nanowires in the specimens with a heating time of 6 hours were minimized. As for the pure copper plate, the disappearance of the Cu layer and Cu2O layer was not seen regardless of the heating time, therefore there was no interfacial delamination and it was able to produce CuO nanowires at a high density.

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Surfactant-Assisted Growth Of Crystalline Copper Sulphide Nanowire Arrays

Growth of Crystalline Cu<sub>2</sub>S Nanowire Arrays on Copper Surface: Effect of Copper Surface Structure, Reagent Gas Composition, and Reaction Temperature

The Crystal Structure And Growth Direction Of Cu2s Nanowire Arrays Fabricated On A Copper Surface

Oxide-assisted nucleation and growth of copper sulphide nanowire arrays

Large-scale Growth of Copper Oxide Nanowires on Various Copper Substrates

Growth of In2O3 Nanowires Catalyzed by Cu Via a Solid–Liquid–Solid Mechanism

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Thermal Oxidation Of Cu2s Nanowires: A Template Method For The Fabrication Of Mesoscopic Cuxo(X=1,2) Wires

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Growth of CuO Nanowires on Si Substrate by Thermal Oxidation Method and Its Interfacial Delamination Mechanism.

The Influence of Copper Substrate Treatment on the Growth of Cu/sub 2/S Nanowires Arrays and Their Field Emission Characteristics

The Electrochemical Response of Single Crystalline Copper Nanowires to Atmospheric Air and Aqueous Solution

Phase-Selective Synthesis and Self-Assembly of Monodisperse Copper Sulfide Nanocrystals

Growth of Silver Nanowires from Solutions: a Cyclic Penta-Twinned-crystal Growth Mechanism.

Controllable hydrothermal synthesis of Cu2S nanowires on the copper substrate

Catalytic growth and photoluminescence properties of semiconductor single-crystal ZnS nanowires

Low-Temperature Synthesis of Single Crystalline Ag2S Nanowires on Silver Substrates