Theoretical studies on the reactions of hydroxyl radicals with trimethylsilane and tetramethylsilane

Hui Zhang,Gui-Ling Zhang,Ying Wang,Xiao-Yang Yu,Bo Liu,Jing-Yao Liu,Ze-Sheng Li
DOI: https://doi.org/10.1007/s00214-007-0387-2
2007-01-01
Theoretical Chemistry Accounts
Abstract:The multiple-channel reactions OH + SiH(CH 3 ) 3 → products (R1) and the single-channel reaction OH + Si(CH 3 ) 4 → Si(CH 3 ) 3 CH 2 + H 2 O (R2) have been studied by means of the direct dynamics method at the BMC-CCSD//MP2/6-311+G(2d,2p) level. The optimized geometries, frequencies and minimum energy path are all obtained at the MP2/6-311+G(2d,2p) levels, and energy information is further refined by the BMC-CCSD (single-point) level. The rate constants for every reaction channels are calculated by canonical variational transition states theory (CVT) with small-curvature tunneling (SCT) contributions over the temperature range 200–2,000 K. The theoretical total rate constants are in good agreement with the available experimental data, and the three-parameter expression k 1 = 2.53×10 −21 T 3.14 exp(1, 352.86/ T ), k 2 = 6.00 × 10 −19 T 2.54 exp(−106.11/ T ) (in unit of cm 3 molecule −1 s −1 ) over the temperature range 200–2,000 K are given. Our calculations indicate that at the low temperature range, for reaction R1, H-abstraction is favored for the SiH group, while the abstraction from the CH 3 group is a minor channel.
What problem does this paper attempt to address?