Abstract:Silicon carbide is a promising semiconductor material for electrical and optoelectronic applications in the area of high power, high temperature, high frequency and intense radiation. Many groups have worked on growing SiC bulk crystals by sublimation from SiC powder source at a temperature above 2000 oC under an argon environment. They have also worked on improving the crystal growth rate. Traditional approach is to increase furnace temperature to enhance the growth rate. However, high cost of inert crucible at high temperature and impurity caused by crucible degradation set limit on the maximum growth rate which can be achieved. Current existing crucible and other components in the furnace are no longer passive at high temperature. Also understanding of vapor transport during powder sublimation and the interplay between vapor transport and powder sublimation is important for the optimization of the sublimation growth process. A comprehensive numerical model combining heat transfer, sublimation, species transport, and powder porosity evolution of SiC sublimation growth process is developed in this paper. The mechanism of vapor transport is described, in which a driving force is introduced to explain vapor transport. A new method to increase crystal growth rate is proposed based on the model. The new method includes changing the initial powder porosity and creating a hole in the packed powder. Simulation results for the case with a central hole and without hole are presented. The results show that the powder sublimation rate increases by creating a hole, and it is also validated by experiments. The results also reveal that the mass of the as-grown crystal increases if the powder sublimation rate increases. Finally, the powder geometry is optimized using numerical simulations.

Optimization of the design of a crucible for a SiC sublimation growth system using a global model

Optimization of the Thermal Field of 8-Inch SiC Crystal Growth by PVT Method with “3 Separation Heater Method”

Novel Method for High Speed SiC Vapor Growth

Numerical Simulation of a New SiC Growth System by the Dual-Directional Sublimation Method

Increase of SiC sublimation growth rate by optimizing of powder packaging

A Novel Design of Crucible for Sublimation Growth of SiC Single Crystals

Numerical design of induction heating in the PVT growth of SiC crystal

Numerical Simulation of a Novel Method for PVT Growth of SiC by Adding a Graphite Block

Growth Kinetics and Thermal Stress in the Sublimation Growth of Silicon Carbide

Design and Optimization of an Aluminum Nitride Sublimation Growth System

Influence of Inner Crucible Radius Variation on the Thermal Field and Oxygen Transport in the Melt During the Growth of Silicon by Continuous Czochralski Method

Optimization of thermal field of 150 mm SiC crystal growth by PVT method

Control of the Growth Quality by Optimizing the Crucible Structure for Growth of Large-Sized SiC Single Crystal

Global Simulation Of A Czochralski Furnace For Silicon Crystal Growth Against The Assumed Thermophysical Properties

Influence of Crucible Thermal Conductivity on Crystal Growth in an Industrial Directional Solidification Process for Silicon Ingots

Process Parameters Influence on the Growth Rate During Silicon Purification by Vacuum Directional Solidification

Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

Thermal Field Design of a Large-Sized SiC Using the Resistance Heating PVT Method Via Simulations

Modeling and Simulation of Si Crystal Growth from Melt

Analysis of SiC Crystal Sublimation Growth by Fully Coupled Compressible Multi-Phase Flow Simulation

Influence of Crystal Growth Rate on the Thermal Field in a Directional Solidification Process for Silicon Solar Cells